Research Article

|

2010, 3(11): 800–806

|

https://doi.org/10.1007/s12274-010-0047-z

Van Hove Singularities as a Result of Quantum Confinement: The Origin of Intriguing Physical Properties in Pb Thin Films

Yu Jie Sun1, 2, S. Souma2, Wen Juan Li3, T. Sato4, Xie Gang Zhu1, Guang Wang1, Xi Chen1, Xu Cun Ma3, Qi Kun Xue1, 2, 3, Jin Feng Jia1(), T. Takahashi2, 4, and T. Sakurai2

View Author's information

1 Key Laboratory of Atomic and Nanosciences, Department of Physics, Tsinghua University, Beijing 100084, China
2 WPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
3 Institute of Physics, The Chinese Academy of Sciences, Beijing 100190, China
4 Department of Physics, Tohoku University, Sendai 980-8578, Japan

Keywords: Van Hove singularity, angle-resolved photoemission spectroscopy (ARPES), scanning tunneling spectroscopy (STS), Pb film
Full article PDF
Cite this article(Endnote)
Share this article
Metric

views: 118

Citations: 0

  • Abstract
  • References
In situ angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling spectroscopy (STS) have been used to study the electronic structure of Pb thin films grown on a Si(111) substrates. The experiments reveal that the electronic structure near the Fermi energy is dominated by a set of m-shaped subbands because of strong quantum confinement in the films, and the tops of the m-shaped subbands form an intriguing ring-like Van Hove singularity. Combined with theoretical calculations, we show that it is the Van Hove singularity that leads to an extremely high density of states near the Fermi energy and the recently reported strong oscillations (with a period of two monolayers) in various properties of Pb films.
Related Article
Cite this article

Van Hove Singularities as a Result of Quantum Confinement: The Origin of Intriguing Physical Properties in Pb Thin Films. Nano Res. 2010, 3(11): 800–806 https://doi.org/10.1007/s12274-010-0047-z

Download citation