Review Article

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2008, 1: 361-394

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https://doi.org/10.1007/s12274-008-8043-2

Charge Transport in Disordered Graphene-Based Low Dimensional Materials

Alessandro Cresti1,2, Norbert Nemec3, Blanca Biel1,2, Gabriel Niebler4,5, Franois Triozon1, Gianaurelio Cuniberti4, and Stephan Roche2

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1 CEA, LETI, MINATEC, F38054 Grenoble, France
2 CEA, Institute for Nanoscience and Cryogenics, INAC/SPSMS/GT, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France
3 Theory of Condensed Matter Group, Cavendish Laboratory, University of Cambridge, Trinity Lane, Cambridge CB2 17N, UK
4 Institute for Materials Science, TU Dresden, D-01062 Dresden, Germany
5 Department of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University, Ke Karlovu 5, 121 16 Prague 2, Czech Republic

Keywords: Graphene, charge transport, carbon nanotubes
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  • Abstract
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Two-dimensional graphene, carbon nanotubes, and graphene nanoribbons represent a novel class of low dimensional materials that could serve as building blocks for future carbon-based nanoelectronics. Although these systems share a similar underlying electronic structure, whose exact details depend on confi nement effects, crucial differences emerge when disorder comes into play. In this review, we consider the transport properties of these materials, with particular emphasis on the case of graphene nanoribbons. After summarizing the electronic and transport properties of defect-free systems, we focus on the effects of a model disorder potential (Anderson-type), and illustrate how transport properties are sensitive to the underlying symmetry. We provide analytical expressions for the elastic mean free path of carbon nanotubes and graphene nanoribbons, and discuss the onset of weak and strong localization regimes, which are genuinely dependent on the transport dimensionality. We also consider the effects of edge disorder and roughness for graphene nanoribbons in relation to their armchair or zigzag orientation.
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Charge Transport in Disordered Graphene-Based Low Dimensional Materials. Nano Res. 2008, 1: 361-394 https://doi.org/10.1007/s12274-008-8043-2

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