Research Article

|

2008, 1: 395-402

|

https://doi.org/10.1007/s12274-008-8039-y

Computational Model of Edge Effects in Graphene Nanoribbon Transistors

Pei Zhao1, Mihir Choudhury2, Kartik Mohanram2, and Jing Guo1

View Author's information

1 Department of Electrical and Computer Engineering, University of Florida, Gainesville, FL 32611, USA
2 Department of Electrical and Computer Engineering, Rice University, Houston, TX 77005, USA

Keywords: Graphene nanoribbon field-effect transistor, edge bond relaxation, third nearest neighbor interaction, edge scattering
Full article PDF
Cite this article(Endnote)
Share this article
Metric

views: 143

Citations: 0

  • Abstract
  • References
We present a semi-analytical model incorporating the effects of edge bond relaxation, the third nearest neighbor interactions, and edge scattering in graphene nanoribbon fi eld-effect transistors (GNRFETs) with armchair-edge GNR (AGNR) channels. Unlike carbon nanotubes (CNTs) which do not have edges, the existence of edges in the AGNRs has a signifi cant effect on the quantum capacitance and ballistic I V characteristics of GNRFETs. For an AGNR with an index of m=3p, the band gap decreases and the ON current increases whereas for an AGNR with an index of m=3p+1, the quantum capacitance increases and the ON current decreases. The effect of edge scattering, which reduces the ON current, is also included in the model.
Related Article
Cite this article

Computational Model of Edge Effects in Graphene Nanoribbon Transistors. Nano Res. 2008, 1: 395-402 https://doi.org/10.1007/s12274-008-8039-y

Download citation