Research Article

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2009, 2: 851-856

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https://doi.org/10.1007/s12274-009-9083-y

Synthesis of Isotopically-Labeled Graphite Films by Cold-Wall Chemical Vapor Deposition and Electronic Properties of Graphene Obtained from Such Films

Weiwei Cai

1, Richard D. Piner1, Yanwu Zhu1, Xuesong Li1, Zhenbing Tan2, Herman Carlo Floresca3, Changli Yang2, Li Lu2, M. J. Kim3, Rodney S. Ruoff1

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1 Department of Mechanical Engineering and the Texas Materials Institute, University of Texas at Austin, Austin, TX 78712, USA

2 Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

3 Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75083, USA

Keywords: Chemical vapor deposition (CVD), isotopically-labeled graphite, graphene
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  • Abstract
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We report the synthesis of isotopically-labeled graphite fi lms on nickel substrates by using cold-wall chemical vapor deposition (CVD). During the synthesis, carbon from 12C- and 13C-methane was deposited on, and dissolved in, a nickel foil at high temperature, and a uniform graphite film was segregated from the nickel surface by cooling the sample to room temperature. Scanning and transmission electron microscopy, micro- Raman spectroscopy, and X-ray diffraction prove the presence of a graphite fi lm. Monolayer graphene fi lms obtained from such isotopically-labeled graphite fi lms by mechanical methods have electron mobility values greater than 5000 cm2·V 1·s 1 at low temperatures. Furthermore, such films exhibit the half-integer quantum Hall effect over a wide temperature range from 2 K to 200 K, implying that the graphite grown by this cold-wall CVD approach has a quality as high as highly oriented pyrolytic graphite (HOPG). The results from transport measurements indicate that 13C-labeling does not significantly affect the electrical transport properties of graphene.
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Synthesis of Isotopically-Labeled Graphite Films by Cold-Wall Chemical Vapor Deposition and Electronic Properties of Graphene Obtained from Such Films. Nano Res. 2009, 2: 851-856 https://doi.org/10.1007/s12274-009-9083-y

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