Research Article

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2009, 2: 321-326

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https://doi.org/10.1007/s12274-009-9029-4

Synthesis of Vertically Oriented GaN Nanowires on a LiAlO2 Substrate via Chemical Vapor Deposition

Xiaoli He, Guowen Meng(), Xiaoguang Zhu, and Mingguang Kong
Key Laboratory of Materials Physics, and Anhui Key Laboratory of Nanomaterials and Nanostructures, Institute of Solid State Physics,

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Keywords: GaN, LiAlO2, chemical vapor deposition, triangular cross-section, vapor liquid solid, photoluminescence
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  • Abstract
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Vertically oriented nanowires (NWs) of single-crystalline wurtzite GaN have been fabricated on a -LiAlO2 (100) substrate coated with a Au layer, via a chemical vapor deposition process at 1000 °C using gallium and ammonia as source materials. The GaN NWs grow along the nonpolar [10 ] direction with steeply tapering tips, and have triangular cross-sections with widths of 50 100 nm and lengths of up to several microns. The GaN NWs are formed by a vapor liquid solid growth mechanism and the tapering tips are attributed to the temperature decrease in the final stage of the synthesis process. The aligned GaN NWs show blue-yellow emission originating from defect levels, residual impurities or surface states of the GaN NWs, and have potential applications in nanotechnology.
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Synthesis of Vertically Oriented GaN Nanowires on a LiAlO2 Substrate via Chemical Vapor Deposition. Nano Res. 2009, 2: 321-326 https://doi.org/10.1007/s12274-009-9029-4

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