Research Article


2009, 2: 706-712


Solvothermal-Assisted Exfoliation Process to Produce Graphene with High Yield and High Quality

Wen Qian1,, Rui Hao1,, Yanglong Hou1 ), Yuan Tian2, Chengmin Shen2, Hongjun Gao2, and Xuelei Liang3

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1 Department of Advanced Materials and Nanotechnology, College of Engineering, Peking University, Beijing 100871, China
2 Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
3 Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China These authors contributed equally to this work.

Keywords: Graphene, solvothermal-assisted exfoliation, monolayer and bilayer, high quality
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  • Abstract
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Monolayer and bilayer graphene sheets have been produced by a solvothermal-assisted exfoliation process in a highly polar organic solvent, acetonitrile, using expanded graphite (EG) as the starting material. It is proposed that the dipole-induced dipole interactions between graphene and acetonitrile facilitate the exfoliation and dispersion of graphene. The facile and effective solvothermal-assisted exfoliation process raises the low yield of graphene reported in previous syntheses to 10 wt% 12 wt%. By means of centrifugation at 2000 rpm for 90 min, monolayer and bilayer graphene were separated effectively without the need to add a stabilizer or modifi er. Electron diffraction and Raman spectroscopy indicate that the resulting graphene sheets are high quality products without any signifi cant structural defects.
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Solvothermal-Assisted Exfoliation Process to Produce Graphene with High Yield and High Quality. Nano Res. 2009, 2: 706-712

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