Research Article


2011, 4(5): 440–447


Selective Growth of ZnO Nanorods on SiO2/Si Substrates Using a Graphene Buffer Layer

Won Mook Choi1,§, Kyung-Sik Shin2,§, Hyo Sug Lee1, Dukhyun Choi3, Kihong Kim1, Hyeon-Jin Shin1, Seon-Mi Yoon1, Jae-Young Choi1 (), and Sang-Woo Kim2 ()

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1 Samsung Advanced Institute of Technology, Giheung, Yongin, Gyeonggi 446-712, Republic of Korea
2 School of Advanced Materials Science and Engineering, Sungkyunkwan (SKKU) Advanced Institute of Nanotechnology (SAINT), Center for Human Interface Nanotechnology (HINT), Sungkyunkwan University, Suwon 440-746, Republic of Korea
3 Department of Mechanical Engineering, Kyung Hee University, Yongin, Gyeonggi 446-701, Republic of Korea

Keywords: Graphene, ZnO, nanorod, heterojunction, selective growth, solution
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  • Abstract
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A promising strategy for the selective growth of ZnO nanorods on SiO2/Si substrates using a graphene buffer layer in a low temperature solution process is described. High densities of ZnO nanorods were grown over a large area and most ZnO nanorods were vertically well-aligned on graphene. Furthermore, selective growth of ZnO nanorods on graphene was realized by applying a simple mechanical treatment, since ZnO nanorods formed on graphene are mechanically stable on an atomic level. These results were confirmed by first principles calculations which showed that the ZnO–graphene binding has a low destabilization energy. In addition, it was found that ZnO nanorods grown on SiO2/Si with a graphene buffer layer have better optical properties than ZnO nanorods grown on bare SiO2/Si. The nanostructured ZnO–graphene materials have promising applications in future flexible electronic and optical devices.
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Selective Growth of ZnO Nanorods on SiO2/Si Substrates Using a Graphene Buffer Layer. Nano Res. 2011, 4(5): 440–447

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