Research Article


2011, 4(5): 434–439


High-Quality Single-Layer Graphene via Reparative Reduction of Graphene Oxide

Boya Dai1, Lei Fu1(), Lei Liao1, Nan Liu1, Kai Yan1, Yongsheng Chen2, and Zhongfan Liu1()

View Author's information

1Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China2College of Chemistry, Nankai University, Tianjin, 300071, China

Keywords: Graphene, graphene oxide, reparative reduction, transparent flexible electrode
Full article PDF
Cite this article(Endnote)
Share this article

views: 161

Citations: 0

  • Abstract
  • References
  • Electronic Supplementary Material
Reduction of graphene oxide (GO) is a promising low-cost synthetic approach to bulk graphene, which offers an accessible route to transparent conducting films and flexible electronics. Unfortunately, the release of oxygen-containing functional groups inevitably leaves behind vacancies and topological defects on the reduced GO sheet, and its low electrical conductivity hinders the development of practical applications. Here, we present a strategy for real-time repair of the newborn vacancies with carbon radicals produced by thermal decomposition of a suitable precursor. The sheet conductivity of thus-obtained single-layer graphene was raised more than six-fold to 350–410 S/cm (whilst retaining >96% transparency). X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy revealed that the conductivity enhancement can be attributed to the formation of additional sp2-C structures. This method provides a simple and efficient process for obtaining highly conductive transparent graphene films.
Related Article
Cite this article

High-Quality Single-Layer Graphene via Reparative Reduction of Graphene Oxide. Nano Res. 2011, 4(5): 434–439

Download citation