Research Article

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2012, 5(6): 388–394

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https://doi.org/10.1007/s12274-012-0219-0

Short Channel Field-Effect Transistors from Highly Enriched Semiconducting Carbon Nanotubes

Justin Wu1, Liming Xie1, Guosong Hong1, Hong En Lim2, Boanerges Thendie2, Yasumitsu Miyata2, Hisanori Shinohara2, and Hongjie Dai1 ()

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Justin Wu1, Liming Xie1, Guosong Hong1, Hong En Lim2, Boanerges Thendie2, Yasumitsu Miyata2, Hisanori Shinohara2, and Hongjie Dai1 ()

Keywords: KEYWORDS Single-walled carbon nanotubes, separation, Raman spectroscopy, field-effect transistor
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ABSTRACT Semiconducting single-walled carbon nanotubes (s-SWNTs) with a purity of ~98% have been obtained by gel filtration of arc-discharge grown SWNTs with diameters in the range 1.2–1.6 nm. Multi-laser Raman spectroscopy confirmed the presence of less than 2% of metallic SWNTs (m-SWNTs) in the s-SWNT enriched sample. Measurement of ~50 individual tubes in Pd-contacted devices with channel length 200 nm showed on/off ratios of >104, conductances of 1.38–5.8 μS, and mobilities in the range 40–150 cm2•V/s. Short channel multi-tube devices with ~100 tubes showed lower on/off ratios due to residual m-SWNTs, although the on-current was greatly increased relative to the devices made from individual tubes.
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Short Channel Field-Effect Transistors from Highly Enriched Semiconducting Carbon Nanotubes. Nano Res. 2012, 5(6): 388–394 https://doi.org/10.1007/s12274-012-0219-0

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