Research Article


2013, 6(3): 191–199


Fast and reliable identification of atomically thin layers of TaSe2 crystals

Andres Castellanos-Gomez1 (), Efrén Navarro-Moratalla2, Guillermo Mokry3, Jorge Quereda3, Elena Pinilla-Cienfuegos2, Nicolás Agrat3,4, Herre S. J. van der Zant1, Eugenio Coronado2, Gary A. Steele1, and Gabino Rubio-Bollinger3 ()

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1 Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands
2 Instituto Ciencia Molecular (ICMol), Univ. Valencia, C/Catedrático José Beltrán 2, E-46980, Paterna, Spain
3 Departamento de Física de la Materia Condensada (C–III). Universidad Autónoma de Madrid, Campus de Cantoblanco, 28049 Madrid, Spain
4 Instituto Madrileo de Estudios Avanzados en Nanociencia IMDEA-Nanociencia, E-28049 Madrid, Spain

Keywords: KEYWORDS atomically thin layer, metal dichalcogenide, layered superconductor, TaSe2, optical microscopy, Raman spectroscopy
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ABSTRACT Deposition of clean and defect-free atomically thin two-dimensional crystalline flakes on surfaces by mechanical exfoliation of layered bulk materials has proven to be a powerful technique, but it requires a fast, reliable and non-destructive way to identify the atomically thin flakes among a crowd of thick flakes. In this work, we provide general guidelines to identify ultrathin flakes of TaSe2 by means of optical microscopy and Raman spectroscopy. Additionally, we determine the optimal substrates to facilitate the optical identification of atomically thin TaSe2 crystals. Experimental realization and isolation of ultrathin layers of TaSe2 enables future studies on the role of the dimensionality in interesting phenomena such as superconductivity and charge density waves.
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Fast and reliable identification of atomically thin layers of TaSe2 crystals. Nano Res. 2013, 6(3): 191–199

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