Research Article


2013, 6(3): 200–207


An innovative way of etching MoS2: Characterization and mechanistic investigation

Yuan Huang1,2,3,§, Jing Wu2,3,§, Xiangfan Xu2,3, Yuda Ho2,3, Guangxin Ni2,3, Qiang Zou1, Gavin Kok Wai Koon2,3, Weijie Zhao2,3,4, A. H. Castro Neto2,3,6, Goki Eda2,3,4, Chengmin Shen1, and Barbaros zyilmaz2,3,5,6 ()

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1 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190 China
2 Department of Physics, 2 Science Drive 3, National University of Singapore, 117542 Singapore
3 Graphene Research Centre, 6 Science Drive 2, National University of Singapore, 117542 Singapore
4 Department of Chemistry, National University of Singapore, 6 Science Drive 2, 117546 Singapore
5 Nanocore, 4 Engineering Drive 3, National University of Singapore, 117576 Singapore
6 NUS Graduate School for Integrative Sciences and Engineering (NGS), Centre for Life Sciences (CeLS), 28 Medical Drive, 117456 Singapore
§ These two authors made an equal contribution to the work.

Keywords: MoS2, etching, XeF2, graphene, photoluminescence, hexagonal
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We report a systematic study of the etching of MoS2 crystals by using XeF2 as a gaseous reactant. By controlling the etching process, monolayer MoS2 with uniform morphology can be obtained. The Raman and photoluminescence spectra of the resulting material were similar to those of exfoliated MoS2. Utilizing this strategy, different patterns such as a Hall bar structure and a hexagonal array can be realized. Furthermore, the etching mechanism was studied by introducing graphene as an etching mask. We believe our technique opens an easy and controllable way of etching MoS2, which can be used to fabricate complex nanostructures, such as nanoribbons, quantum dots, and transistor structures. This etching process using XeF2 can also be extended to other interesting two-dimensional crystals.
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An innovative way of etching MoS2: Characterization and mechanistic investigation. Nano Res. 2013, 6(3): 200–207

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