Research Article

|

2013, 6(4): 269–274

|

https://doi.org/10.1007/s12274-013-0304-z

Raman scattering study of the phonon dispersion in twisted bilayer graphene

Jessica Campos-Delgado1 (), Luiz G. Canado2, Carlos A. Achete3, Ado Jorio2, and Jean-Pierre Raskin1

View Author's information

1 Institute of Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM), Université catholique de Louvain, Louvain-la-Neuve, 1348, Belgium
2 Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte, MG, 30123-970, Brazil
3 Diviso de Metrologia de Materiais, Instituto Nacional de Metrologia, Qualidade e Tecnologia (INMETRO), Xerém, RJ, 25250-020, Brazil

Keywords: twisted bilayer graphene, Raman spectroscopy, phonon branches
Full article PDF
Cite this article(Endnote)
Share this article
Metric

views: 132

Citations: 0

  • Abstract
  • References
Bilayer graphene with a twist angle θ between the layers generates a superlattice structure known as a Moiré pattern. This superlattice provides a θ-dependent q wavevector that activates phonons in the interior of the Brillouin zone. Here we show that this superlattice-induced Raman scattering can be used to probe the phonon dispersion in twisted bilayer graphene (tBLG). The effect reported here is different from the widely studied double-resonance in graphene-related materials in many aspects, and despite the absence of stacking order in tBLG, layer breathing vibrations (namely ZO’ phonons) are observed.
Related Article
Cite this article

Raman scattering study of the phonon dispersion in twisted bilayer graphene. Nano Res. 2013, 6(4): 269–274 https://doi.org/10.1007/s12274-013-0304-z

Download citation