Research Article


2013, 6(4): 269–274


Raman scattering study of the phonon dispersion in twisted bilayer graphene

Jessica Campos-Delgado1 (), Luiz G. Canado2, Carlos A. Achete3, Ado Jorio2, and Jean-Pierre Raskin1

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1 Institute of Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM), Université catholique de Louvain, Louvain-la-Neuve, 1348, Belgium
2 Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte, MG, 30123-970, Brazil
3 Diviso de Metrologia de Materiais, Instituto Nacional de Metrologia, Qualidade e Tecnologia (INMETRO), Xerém, RJ, 25250-020, Brazil

Keywords: twisted bilayer graphene, Raman spectroscopy, phonon branches
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  • Abstract
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Bilayer graphene with a twist angle θ between the layers generates a superlattice structure known as a Moiré pattern. This superlattice provides a θ-dependent q wavevector that activates phonons in the interior of the Brillouin zone. Here we show that this superlattice-induced Raman scattering can be used to probe the phonon dispersion in twisted bilayer graphene (tBLG). The effect reported here is different from the widely studied double-resonance in graphene-related materials in many aspects, and despite the absence of stacking order in tBLG, layer breathing vibrations (namely ZO’ phonons) are observed.
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Raman scattering study of the phonon dispersion in twisted bilayer graphene. Nano Res. 2013, 6(4): 269–274

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