Research Article


2014, 7(5): 694–703


Highly sensitive phototransistors based on twodimensional GaTe nanosheets with direct bandgap

Pingan Hu1 (*), Jia Zhang1, Mina Yoon2, Xiao-Fen Qiao3, Xin Zhang3, Wei Feng1, Pingheng Tan3 (*), Wei Zheng1, Jingjing Liu1, Xiaona Wang1, Juan C. Idrobo2, David B. Geohegan2, and Kai Xiao2(*)

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1 Key Lab of Microsystem and Microstructure, Harbin Institute of Technology, Ministry of Education, No. 2 Yikuang Street, Harbin, 150080, China
2 Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, One Bethel Valley Road, Oak Ridge, TN, 37831, USA
3 State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Keywords: photodetector, gallium telluride, two-dimensional, semiconductor, nanosheet
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Highly sensitive phototransistors based on two-dimensional (2D) GaTe nanosheet have been demonstrated. The performance (photoresponsivity, detectivity) of the GaTe nanosheet phototransistor can be efficiently adjusted by using the applied gate voltage. The devices exhibit an ultrahigh photoresponsivity of 274.3 AW–1. The detectivity of 2D GaTe devices is ~1012 Jones, which surpasses that of currently-exploited InGaAs photodetectors (1011–1012 Jones). To reveal the origin of the enhanced photocurrent in GaTe nanosheets, theoretical modeling of the electronic structures was performed to show that GaTe nanosheets also have a direct bandgap structure, which contributes to the promotion of photon absorption and generation of excitons. This work shows that GaTe nanosheets are promising materials for high performance photodetectors.
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Highly sensitive phototransistors based on twodimensional GaTe nanosheets with direct bandgap. Nano Res. 2014, 7(5): 694–703

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