Research Article

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2014, 7(6): 853–859

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https://doi.org/10.1007/s12274-014-0446-7

Plasma-assisted fabrication of monolayer phosphorene and its Raman characterization

Wanglin Lu1,§, Haiyan Nan2,§, Jinhua Hong1 , Yuming Chen2, Chen Zhu1, Zheng Liang3, Xiangyang Ma1, Zhenhua Ni2 (*), Chuanhong Jin1 (*), and Ze Zhang1

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1 State Key Laboratory of Silicon Materials, Key Laboratory of Advanced Materials and Applications for Batteries of Zhejiang Province, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
2 Department of Physics, Southeast University, Nanjing 211189, China
3 Graphene Research and Characterization Center, Taizhou Sunano New Energy Co., Ltd. Taizhou 225300, China
These authors contributed equally to this work.

Keywords: Mechanical cleavage, monolayer phosphorene, two-dimensional semiconductor, plasma thinning, optical contrast, Raman spectroscopy
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  • Abstract
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There have been continuous efforts to seek novel functional two-dimensional semiconductors with high performance for future applications in nanoelectronics and optoelectronics. In this work, we introduce a successful experimental approach to fabricate monolayer phosphorene by mechanical cleavage and a subsequent Ar+ plasma thinning process. The thickness of phosphorene is unambiguously determined by optical contrast spectra combined with atomic force microscopy (AFM). Raman spectroscopy is used to characterize the pristine and plasma-treated samples. The Raman frequency of the A2g mode stiffens, and the intensity ratio of A2g to A1g modes shows a monotonic discrete increase with the decrease of phosphorene thickness down to a monolayer. All those phenomena can be used to identify the thickness of this novel two-dimensional semiconductor. This work on monolayer phosphorene fabrication and thickness determination will facilitate future research on phosphorene.
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Plasma-assisted fabrication of monolayer phosphorene and its Raman characterization. Nano Res. 2014, 7(6): 853–859 https://doi.org/10.1007/s12274-014-0446-7

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