Research Article


2014, 7(12): 1731–1737


Two-dimensional semiconductors with possible high room temperature mobility

Wenxu Zhang (*), Zhishuo Huang, Wanli Zhang, and Yanrong Li

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State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic and Technology of China, Chengdu 610054, China.

Keywords: electron mobility, acoustic phonon, ab initio, two-dimensional (2D) materials
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  • Abstract
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We have calculated the longitudinal acoustic phonon limited electron mobility of 14 two-dimensional semiconductors with composition of MX2, where M (= Mo, W, Sn, Hf, Zr and Pt) is the transition metal, and X is S, Se and Te. We treated the scattering matrix by the deformation potential approximation. We found that out of 14 compounds, MoTe2, HfSe2 and ZrSe2 are promising regarding to their possible high mobility and finite band gap. The phonon limited mobility can be above 2,500 cm2·V–1·s–1 at room temperature.
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Two-dimensional semiconductors with possible high room temperature mobility. Nano Res. 2014, 7(12): 1731–1737

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