Research Article


2015, 8(1): 288–295


Controlled synthesis of single-crystal SnSe nanoplates

Shuli Zhao1,2, Huan Wang1, Yu Zhou1,2, Lei Liao1, Ying Jiang3, Xiao Yang1, Guanchu Chen1, Min Lin1, Yong Wang3, Hailin Peng1,2 (*), and Zhongfan Liu1,2 (*)

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1 Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
2 Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
3 Center of Electron Microscopy and State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China

Keywords: SnSe, IV–VI chalcogenide, nanoplate, two-dimensional layered crystals, optoelectronics
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Two-dimensional layered IV–VI chalcogenides are attracting great interest for applications in next-generation optoelectronic, photovoltaic, and thermoelectric devices. However, great challenges in the controllable synthesis of high-quality IV–VI chalcogenide nanostructures have hindered their in-depth studies and practical applications to date. Here we report, for the first time, a feasible synthesis of single-crystal IV–VI SnSe nanoplates in a controlled manner on mica substrates by vapor transport deposition. The as-grown SnSe nanoplates have approximately square shapes with controllable side lengths varying from 1 to 6 μm. Electrical transport and optoelectronic measurements show that as-obtained SnSe nanoplates display p-type conductivity and high photoresponsivity.
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Controlled synthesis of single-crystal SnSe nanoplates. Nano Res. 2015, 8(1): 288–295

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