Review Article

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2016, 9(2): 380–391

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https://doi.org/10.1007/s12274-015-0918-4

A progressive route for tailoring electrical transport in MoS2

Muhammad Arslan Shehzad1,2, Sajjad Hussain1,2, Muhammad Farooq Khan1,3, Jonghwa Eom1,3, Jongwan Jung1,2, and Yongho Seo1,2 (*)

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1 Graphene Research Institute, Sejong University, Seoul 143-747, Republic of Korea
2 Faculty of Nanotechnology & Advanced Materials Engineering and Graphene Research Institute, Sejong University, Seoul 143-747, Republic of Korea
3 Department of Physics and Graphene Research Institute, Sejong University, Seoul 143-747, Republic of Korea

Keywords: MoS2, grain boundary, liquid crystal, electrical properties, photoresponse
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  • Abstract
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Typically, molybdenum disulfide (MoS2) synthesized by chemical vapor deposition (CVD) is polycrystalline; as a result, the scattering of charge carriers at grain boundaries can lead to performances lower than those observed in exfoliated single-crystal MoS2. Until now, the electrical properties of grain boundaries have been indirectly studied without accurate knowledge of their location. Here, we present a technique to measure the electrical behavior of individual grain boundaries in CVD-grown MoS2, imaged with the help of aligned liquid crystals. Unexpectedly, the electrical conductance decreased by three orders of magnitude for the grain boundaries with the lowest on/off ratio. Our study provides a useful technique to fabricate devices on a single-crystal area, using optimized growth conditions and device geometry. The photoresponse, studied within a MoS2 single grain, showed that the device responsivity was comparable with that of the exfoliated MoS2-based photodetectors.
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A progressive route for tailoring electrical transport in MoS2. Nano Res. 2016, 9(2): 380–391 https://doi.org/10.1007/s12274-015-0918-4

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