Review Article

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2016, 9(6): 1543–1560

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https://doi.org/10.1007/s12274-016-1034-9

Optoelectronic devices based on two-dimensional transition metal dichalcogenides

He Tian1, Matthew L. Chin2, Sina Najmaei2, Qiushi Guo3, Fengnian Xia3, Han Wang1 (*), and Madan Dubey2 (*)

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1 Ming Hsieh Department of Electrical Engineering, University of Southern California, Los Angeles, California 90089, USA
2 United States Army Research Laboratory, Maryland 20783-1197, USA
3 Department of Electrical Engineering, Yale University, Connecticut 06511, USA

Keywords: transition metaldichalcogenides (TMDCs),optoelectronic device,molybdenum disulfide(MoS2), photodetector,light-emitting diode (LED)
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In the past few years, two-dimensional (2D) transition metal dichalcogenide(TMDC) materials have attracted increasing attention of the research community,owing to their unique electronic and optical properties, ranging from thevalley–spin coupling to the indirect-to-direct bandgap transition when scalingthe materials from multi-layer to monolayer. These properties are appealing forthe development of novel electronic and optoelectronic devices with importantapplications in the broad fields of communication, computation, and healthcare.One of the key features of the TMDC family is the indirect-to-direct bandgaptransition that occurs when the material thickness decreases from multilayer tomonolayer, which is favorable for many photonic applications. TMDCs havealso demonstrated unprecedented flexibility and versatility for constructinga wide range of heterostructures with atomic-level control over their layerthickness that is also free of lattice mismatch issues. As a result, layered TMDCsin combination with other 2D materials have the potential for realizing novelhigh-performance optoelectronic devices over a broad operating spectral range.In this article, we review the recent progress in the synthesis of 2D TMDCs andoptoelectronic devices research. We also discuss the challenges facing the scalableapplications of the family of 2D materials and provide our perspective on theopportunities offered by these materials for future generations of nanophotonicstechnology.
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Optoelectronic devices based on two-dimensional transition metal dichalcogenides. Nano Res. 2016, 9(6): 1543–1560 https://doi.org/10.1007/s12274-016-1034-9

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