Research Article

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2016, 9(9): 2623–2631

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https://doi.org/10.1007/s12274-016-1149-z

Temperature-dependent resonance energy transfer from CdSe–ZnS core–shell quantum dots to monolayer MoS2

Juan Li, Weina Zhang, Yao Zhang, Hongxiang Lei, and Baojun Li (*)

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State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, China

Keywords: temperature dependence,resonance energy transfer,quantum dots,monolayer MoS2
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  • Abstract
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We investigated the temperature-dependent resonance energy transfer (ET) fromCdSe–ZnS core–shell quantum dots (QDs) to monolayer MoS2. QDs/MoS2 structureswere fabricated using a spin-coating method. Photoluminescence (PL) spectraand decay curves of the QDs/MoS2 structures were measured in the temperaturerange of 80−400 K. The results indicate that the PL intensity of the QDs decreasedapproximately 81% with increasing temperature, whereas that of the MoS2increased up to a maximum of 78% at 300 K because of the combined effect ofthermal quenching and the ET in the QDs/MoS2 structures. The ET efficiency andET rate also exhibited similar variation trends, both increased with increasingtemperature from 80 to 260 K and then decreased until 400 K, resulting in amaximum ET efficiency of 22% and an ET rate of 1.17 ns–1 at ~260 K. Theseresults are attributed to the varied distribution of the localized excitons and freeexcitons in the QDs/MoS2 structures with increasing temperature.
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Temperature-dependent resonance energy transfer from CdSe–ZnS core–shell quantum dots to monolayer MoS2. Nano Res. 2016, 9(9): 2623–2631 https://doi.org/10.1007/s12274-016-1149-z

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