Research Article

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2016, 9(9): 2803–2810

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https://doi.org/10.1007/s12274-016-1169-8

Impurity-induced formation of bilayered graphene on copper by chemical vapor deposition

Jun Li1,2, Jianing Zhuang3, Chengmin Shen1,4 (*), Yuan Tian1, Yande Que1,2, Ruisong Ma1,2, Jinbo Pan1,2, Yanfang Zhang1,2, Yeliang Wang1,4, Shixuan Du1,4, Feng Ding3 (*), and Hong-Jun Gao1,4 (*)

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1 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
2 University of Chinese Academy of Sciences, Beijing 100049, China
3 Institute of Textiles and Clothing, Hong Kong Polytechnic University, Kowloon, Hong Kong, China
4 Beijing Key Laboratory for Nanomaterials and Nanodevices, Beijing 100190, China

Keywords: graphene, chemical vapor deposition (CVD), bilayer, growth mechanism
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ABSTRACT High-quality single-layered and bilayered graphene (SLG and BLG) was synthesized on copper foil surfaces by controllable chemical vapor deposition (CVD). Impurity nanoparticles formed on the copper foil surface by hightemperature annealing were found to play a crucial role in the growth of BLG. Analysis of energy-dispersive spectrometry (EDS) data indicated that these nanoparticles consisted of silicon and aluminum. According to the inverted wedding cake model, these nanoparticles served as nucleation centers for BLG growth and the free space between a nanoparticle and graphene served as the center of C injection for the continuous growth of the adlayer beneath the top layer. By combining phase-field theory simulations, we confirmed the mechanism of BLG growth and revealed more details about it in comparison with SLG growth. For the first time, this study led to a complete understanding of the BLG growth mechanism from nucleation to continuous growth in the CVD process, and it has opened a door to the thickness-controllable synthesis of graphene.
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Impurity-induced formation of bilayered graphene on copper by chemical vapor deposition. Nano Res. 2016, 9(9): 2803–2810 https://doi.org/10.1007/s12274-016-1169-8

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