Research Article

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2016, 9(12): 3656–3662

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https://doi.org/10.1007/s12274-016-1235-2

Nanowatt power operation of silicon nanowire NAND logic gates on bendable substrates

Junggwon Yun, Myeongwon Lee, Youngin Jeon, Minsuk Kim, Yoonjoong Kim, Doohyeok Lim, and Sangsig Kim (*)

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Department of Electrical Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea

Keywords: negative-AND (NAND) logic gates, bendable electronics, silicon nanowires, nanowatt operation
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of the logic gates indicates that they have good and stable fatigue properties.
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Nanowatt power operation of silicon nanowire NAND logic gates on bendable substrates. Nano Res. 2016, 9(12): 3656–3662 https://doi.org/10.1007/s12274-016-1235-2

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