Research Article


2016, 9(12): 3663–3670


Observing the evolution of graphene layers at high current density

Chun-Wei Huang1, Jui-Yuan Chen1, Chung-Hua Chiu1, Cheng-Lun Hsin2, Tseung-Yuen Tseng3, and Wen-Wei Wu1 (*)

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1 Department of Materials Science and Engineering, Chiao Tung University, 1001 University Road, Hsinchiu 30010
2 Department of Electrical Engineering, Central University, Chung-Li City, Taoyuan 32001
3 Department of Electronics Engineering and Institute of Electronics, Chiao Tung University, 1001 University Road, Hsinchiu 30010

Keywords: graphene, breakdown, high current density, in-situ transmission electron microscope (TEM), Ostwald ripening
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ABSTRACT Graphene has demonstrated its potential in several practical applications owing to its remarkable electronic and physical properties. In this study, we successfully fabricated a suspended graphene device with a width down to 20 nm. The morphological evolution of graphene under various electric field effects was systematically examined using an in-situ transmission electron microscope (TEM). The hourglass-shaped graphene sample instantly broke apart at 7.5 mA, indicating an impressive breakdown current density. The current-carrying capacity was calculated to be ~1.6 × 109 A·cm–2, which is several orders higher than that of copper. The current-carrying capacity depended on the resistivity of graphene. In addition, atomic volume changes occurred in the multilayer graphene samples due to surface diffusion and Ostwald ripening (OR), indicating that the breakdown mechanism is well approximated by the electric field. This study not only provides a theory to explain the breakdown behavior but also presents the effects on materials contacted with a graphene layer used as the transmission path.
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Observing the evolution of graphene layers at high current density. Nano Res. 2016, 9(12): 3663–3670

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