Research Article

|

2017, 10(5): 1595–1607

|

https://doi.org/10.1007/s12274-016-1302-8

Coaxial multi-interface hollow Ni-Al2O3-ZnO nanowires tailored by atomic layer deposition for selective-frequency absorptions

Lili Yan1,2,§, Jia Liu3,§, Shichao Zhao1,2, Bin Zhang1, Zhe Gao1, Huibin Ge1,2, Yao Chen1,2, Maosheng Cao3 (*), and Yong Qin1 (*)

View Author's information

1 State Key Laboratory of Coal Conversion, Institute of Coal Chemistry, Chinese Academy of Sciences, Taiyuan 030001, China
2 University of Chinese Academy of Sciences, Beijing 100039, China
3 School of Material Science and Engineering, Beijing Institute of Technology, Beijing 100081, China
§ These authors contributed equally to this work.

Keywords: atomic layer deposition (ALD), Ni-Al2O3-ZnO nanowires, selective frequency absorption
Full article PDF
Cite this article(Endnote)
Share this article
Metric

views: 299

Citations: 0

  • Abstract
  • References
  • Electronic Supplementary Material
In this work, atomic layer deposition (ALD) was employed to fabricate coaxial multi-interface hollow Ni-Al2O3-ZnO nanowires. The morphology, microstructure, and ZnO shell thickness dependent electromagnetic and microwave absorbing properties of these Ni-Al2O3-ZnO nanowires were characterized. Excellent microwave absorbing properties with a minimum reflection loss (RL) of approximately –50 dB at 9.44 GHz were found for the Ni-Al2O3-100ZnO nanowires, which was 10 times of Ni-Al2O3 nanowires. The microwave absorption frequency could be effectively varied by simply adjusting the number of ZnO deposition cycles. The absorption peaks of Ni-Al2O3-100ZnO and Ni-Al2O3-150ZnO nanowires shifted of 5.5 and 6.8 GHz towards lower frequencies, respectively, occupying one third of the investigated frequency band. The enhanced microwave absorption arose from multiple loss mechanisms caused by the unique coaxial multi-interface structure, such as multi-interfacial polarization relaxation, natural and exchange resonances, as well as multiple internal reflections and scattering. These results demonstrate that the ALD method can be used to realize tailored nanoscale structures, making it a highly promising method for obtaining highefficiency microwave absorbers, and opening a potentially novel route for frequency adjustment and microwave imaging fields.
Related Article
Cite this article

Coaxial multi-interface hollow Ni-Al2O3-ZnO nanowires tailored by atomic layer deposition for selective-frequency absorptions. Nano Res. 2017, 10(5): 1595–1607 https://doi.org/10.1007/s12274-016-1302-8

Download citation