Luzhao Sun1,2,§, Li Lin1,§, Jincan Zhang1,2, Huan Wang1, Hailin Peng1 (*), and Zhongfan Liu1 (*)
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1 Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China 2 Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China § These authors contributed equally to this work.
Keywords:large single-crystalline graphene, fast growth, isotope labelling, carbon source
The fast growth of large single-crystalline graphene by chemical vapor deposition
on Cu foil remains a challenge for industrial-scale applications. To achieve the
fast growth of large single-crystalline graphene, understanding the detailed
dynamics governing the entire growth process—including nucleation, growth,
and coalescence—is important; however, these remain unexplored. In this
study, by using a pulsed carbon isotope labeling technique in conjunction with
micro-Raman spectroscopy identification, we visualized the growth dynamics, such
as nucleation, growth, and coalescence, during the fast growth of large singlecrystalline
graphene domains. By tuning the supply of the carbon source, a
growth rate of 320 μm/min and the growth of centimeter-sized graphene single
crystals were achieved on Cu foil.