Research Article

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2017, 10(5): 1608–1617

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https://doi.org/10.1007/s12274-016-1319-z

Probing the intrinsic optical quality of CVD grown MoS2

Amina Zafar1,§, Haiyan Nan1,§, Zainab Zafar2, Zhangting Wu1, Jie Jiang1, Yumeng You2 (*), and Zhenhua Ni1 (*)

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1 Department of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 211189, China
2 Ordered Matter Science Research Center, Southeast University, Nanjing 211189, China
§ These authors contributed equally to this work.

Keywords: transition metal dichalcogenides, MoS2, chemical vapor deposition, photoluminescence, defect, mobility
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ABSTRACT Optical emission efficiency of two-dimensional layered transition metal dichalcogenides (TMDs) is one of the most important parameters affecting their optoelectronic performance. The optimization of the growth parameters by chemical vapor deposition (CVD) to achieve optoelectronic-grade quality TMDs is, therefore, highly desirable. Here, we present a systematic photoluminescence (PL) spectroscopic approach to assess the intrinsic optical and crystalline quality of CVD grown MoS2 (CVD MoS2). We propose the use of the intensity ratio between the PL measured in air and vacuum as an effective way to monitor the intrinsic optical quality of CVD MoS2. Low-temperature PL measurements are also used to evaluate the structural defects in MoS2, via defect-associated bound exciton emission, which well correlates with the field-effect carrier mobility of MoS2 grown at different temperatures. This work therefore provides a sensitive, noninvasive method to characterize the optical properties of TMDs, allowing the tuning of the growth parameters for the development of optoelectronic devices.
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Probing the intrinsic optical quality of CVD grown MoS2. Nano Res. 2017, 10(5): 1608–1617 https://doi.org/10.1007/s12274-016-1319-z

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