Research Article

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2017, 10(10): 3295–3302

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https://doi.org/10.1007/s12274-017-1542-2

Highly uniform and nonlinear selection device base on trapezoidal band structure for high density nano-crossbar memory array

Qing Luo1,2, Xiaoxin Xu1,2, Hangbing Lv1,2,3 (*), Tiancheng Gong1,2, Shibing Long1,2, Qi Liu1,2, Ling Li1,2, and Ming Li1,2,3 (*)

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1 Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
2 University of Chinese Academy of Sciences, Beijing 100049, China
3 Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing 211800, China

Keywords: crossbar array, selector, trapezoidal barrier, gradient oxygen concentration, high uniformity
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ABSTRACT Crossbar array provides a cost-effective approach for achieving high-density integration of two-terminal functional devices. However, the “sneaking current problem”, which can lead to read failure, is a severe challenge in crossbar arrays. To inhibit the sneaking current from unselected cells, the integration of individual selection devices is necessary. In this work, we report a novel TaO x-based selector exhibiting a trapezoidal band structure formed by tuning the concentration of defects in the oxide. Salient features such as a high current density (1 MA·cm–2), high selectivity (5 × 104), low off-state current (~10 pA), robust endurance (>1010), self-compliance, and excellent uniformity were successfully achieved. The integrated one-selector one-resistor (1S1R) device exhibits high nonlinearity in the low resistance state (LRS), which is quite effective in solving the sneaking current issue.
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Highly uniform and nonlinear selection device base on trapezoidal band structure for high density nano-crossbar memory array. Nano Res. 2017, 10(10): 3295–3302 https://doi.org/10.1007/s12274-017-1542-2

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