Research Article

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2018, 11(3): 1227–1237

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https://doi.org/10.1007/s12274-017-1735-8

High-performance enhancement-mode thin-film transistors based on Mg-doped In2O3 nanofiber networks

Hongchao Zhang1, You Meng1, Longfei Song1, Linqu Luo1, Yuanbin Qin2, Ning Han3, Zaixing Yang4, Lei Liu1, Johnny C. Ho5,6,7 (*), and Fengyun Wang1 (*)

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1 College of Physics and Cultivation Base for State Key Laboratory, Qingdao University, Qingdao 266071, China
2 Center for Advancing Materials Performance from the Nanoscale, State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China
3 State Key Laboratory of Multiphase Complex Systems, Institute of Process Engineering, Chinese Academy of Sciences, Beijing 100190, China
4 School of Microelectronics and Center of Nanoelectronics, Shandong University, Jinan 250100, China
5 Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, China
6 State Key Laboratory of Millimeter Waves, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, China
7 Shenzhen Research Institute, City University of Hong Kong, Shenzhen 518057, China

Keywords: In2O3 nanofiber, transistor, doping, threshold voltage, enhancement mode
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ABSTRACT Although In2O3 nanofibers (NFs) are well-known candidates as active materials for next-generation, low-cost electronics, these NF based devices still suffer from high leakage current, insufficient on–off current ratios (Ion/Ioff), and large, negative threshold voltages (VTH), leading to poor device performance, parasitic energy consumption, and rather complicated circuit design. Here, instead of the conventional surface modification of In2O3 NFs, we present a one-step electrospinning process (i.e., without hot-press) to obtain controllable Mg-doped In2O3 NF networks to achieve high-performance enhancement-mode thin-film transistors (TFTs). By simply adjusting the Mg doping concentration, the device performance can be manipulated precisely. For the optimal doping concentration of 2 mol%, the devices exhibit a small VTH (3.2 V), high saturation current (1.1 × 10–4 A), large on/off current ratio (>108), and respectable peak carrier mobility (2.04 cm2/(V·s)), corresponding to one of the best device performances among all 1D metal-oxide NFs based devices reported so far. When high-κ HfOx thin films are employed as the gate dielectric, their electron mobility and VTH can be further improved to 5.30 cm2/(V·s) and 0.9 V, respectively, which demonstrates the promising prospect of these Mg-doped In2O3 NF networks for highperformance, large-scale, and low-power electronics.
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High-performance enhancement-mode thin-film transistors based on Mg-doped In2O3 nanofiber networks. Nano Res. 2018, 11(3): 1227–1237 https://doi.org/10.1007/s12274-017-1735-8

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