Review Article

|

2018, 11(6): 2909–2931

|

https://doi.org/10.1007/s12274-017-1942-3

Space-confined vapor deposition synthesis of two dimensional materials

Shasha Zhou, Lin Gan (*), Deli Wang, Huiqiao Li, and Tianyou Zhai (*)

View Author's information

School of Materials Science and Engineering, School of Chemistry and Chemical Engineering, Huazhong University of Science and Technology, Wuhan 430074, China

Keywords: two dimensional, vapor deposition, space confinement, transition metal dichalcogenides
Full article PDF
Cite this article(Endnote)
Share this article
Metric

views: 364

Citations: 0

  • Abstract
  • References
ABSTRACT Two dimensional (2D) nanomaterials are promising fundamental building blocks for use in the next-generation semiconductor industry due to their unique geometry and excellent (opto)-electronic properties. However, large scale high quality fabrication of 2D nanomaterials remains challenging. Thus, the development of controllable fabrication methods for 2D materials is essential for their future practical application. In this review, we will discuss the importance of the space-confined vapor deposition strategy in the controllable fabrication of 2D materials and summarize recent progress in the utilization of this strategy for the synthesis of novel materials or structures. Using this method, various high quality ultrathin 2D materials, including large-area graphene and boron nitride, ReS2/ReSe2, HfS2, pyramid-structured multilayer MoS2, and the topological insulators Bi2Se3 and Bi2Te3, have been successfully obtained. Additionally, by utilizing van der Waals epitaxy growth substrates such as mica or other 2D materials, patterned growth of 2D nanomaterials can be easily achieved via a surface-induced growth mechanism. Finally, we provide a short prospect for future development of this strategy.
Related Article
Cite this article

Space-confined vapor deposition synthesis of two dimensional materials. Nano Res. 2018, 11(6): 2909–2931 https://doi.org/10.1007/s12274-017-1942-3

Download citation