Research Article

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2018, 11(11): 5935–5945

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https://doi.org/10.1007/s12274-018-2106-9

Towards high-mobility In2xGa2–2xO3 nanowire field-effect transistors

Ziyao Zhou1,3, Changyong Lan1,2, SenPo Yip1,3,4, Renjie Wei1,3, Dapan Li1,3, Lei Shu1,3,4, and Johnny C. Ho1,3,4 (*)

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1 Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong 999077, China
2 School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
3 Shenzhen Research Institute, City University of Hong Kong, Shenzhen 518057, China
4 State Key Laboratory of Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong 999077, China

Keywords: In2O3,In2xGa2−2xO3, nanowire, chemical vapor deposition, mobility, oxygen vacancy
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ABSTRACT Recently, owing to the excellent electrical and optical properties, n-type In2O3 nanowires (NWs) have attracted tremendous attention for application in memory devices, solar cells, and ultra-violet photodetectors. However, the relatively low electron mobility of In2O3 NWs grown by chemical vapor deposition (CVD) has limited their further utilization. In this study, utilizing in-situ Ga alloying, highly crystalline, uniform, and thin In2xGa2−2xO3 NWs with diameters down to 30 nm were successfully prepared via ambient-pressure CVD. Introducing an optimal amount of Ga (10 at.%) into the In2O3 lattice was found to effectively enhance the crystal quality and reduce the number of oxygen vacancies in the NWs. A further increase in the Ga concentration adversely induced the formation of a resistive β-Ga2O3 phase, thereby deteriorating the electrical properties of the NWs. Importantly, when configured into global back-gated NW field-effect transistors, the optimized In1.8Ga0.2O3 NWs exhibit significantly enhanced electron mobility reaching up to 750 cm2·V–1·s–1 as compared with that of the pure In2O3 NW, which can be attributed to the reduction in the number of oxygen vacancies and ionized impurity scattering centers. Highly ordered NW parallel arrayed devices were also fabricated to demonstrate the versatility and potency of these NWs for next-generation, large-scale, and high-performance nanoelectronics, sensors, etc.
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Towards high-mobility In2xGa2–2xO3 nanowire field-effect transistors. Nano Res. 2018, 11(11): 5935–5945 https://doi.org/10.1007/s12274-018-2106-9

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