Research Article


2019, 12(3): 531–536


Black phosphorus inverter devices enabled by in-situ aluminum surface modification

Yue Zheng1,2,§, Zehua Hu2,§, Cheng Han3, Rui Guo4, Du Xiang2,4, Bo Lei2, Yanan Wang2, Jun He5, Min Lai1, and Wei Chen2,4,6 (*)

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1 School of Physics and Optoelectronic Engineering, Nanjing University of Information Science & Technology, Nanjing 210044, China
2 Department of Physics, National University of Singapore, Singapore 117542, Singapore
3 SZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology, Shenzhen University, Shenzhen 518060, China
4 Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
5 School of Physics and Electronics, Central South University, Changsha 410083, China
6 National University of Singapore (Suzhou) Research Institute, Suzhou 215123, China
§ Yue Zheng and Zehua Hu contributed equally to this work.

Keywords: black phosphorus, aluminum, surface doping, electron mobility, inverter
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Two-dimensional black phosphorus (BP) generally exhibits a hole-dominated transport characteristic when configured as field-effect transistor devices. The effective control of charge carrier type and concentration is very crucial for the application of BP in complementary electronics. Herein, we report a facile and effective electron doping methodology on BP, through in situ surface modification with aluminum (Al). The electron mobility of few-layer BP is found to be largely enhanced to ~ 10.6 cm2·V–1·s–1 by over 6 times after aluminum modification. In situ photoelectron spectroscopy characterization reveals the formation of Al–P covalent bond at the interface, which can also serve as local gate to tune the transport properties in BP layers. Finally, a spatially-controlled aluminum doping technique is employed to establish a p–n homojunction on a single BP flake, and hence to realize the complementary inverter devices, where the highest gain value of ~ 33 is obtained.
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Black phosphorus inverter devices enabled by in-situ aluminum surface modification. Nano Res. 2019, 12(3): 531–536

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