Research Article

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2019, 12(8): 1796–1803

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https://doi.org/10.1007/s12274-019-2434-4

Crystalline InGaZnO quaternary nanowires with superlattice structure for high-performance thin-film transistors

Fangzhou Li1, SenPo Yip1,2,3, Ruoting Dong1,2, Ziyao Zhou1,2, Changyong Lan1, Xiaoguang Liang1, Dapan Li1, You Meng1, Xiaolin Kang1, and Johnny C. Ho1,2,3,4 (*)

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1 Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong 999077, China
2 Shenzhen Research Institute, City University of Hong Kong, Shenzhen 518057, China
3 State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Hong Kong 999077, China
4 Centre for Functional Photonics, City University of Hong Kong, Hong Kong 999077, China

Keywords: InGaZnO, nanowires, thin-film transistors, superlattice
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  • Abstract
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Amorphous indium–gallium–zinc oxide (a-IGZO) materials have been widely explored for various thin-film transistor (TFT) applications; however, their device performance is still restricted by the intrinsic material issues especially due to their non-crystalline nature. In this study, highly crystalline superlattice-structured IGZO nanowires (NWs) with different Ga concentration are successfully fabricated by enhanced ambient-pressure chemical vapor deposition (CVD). The unique superlattice structure together with the optimal Ga concentration (i.e., 31 at.%) are found to effectively modulate the carrier concentration as well as efficiently suppress the oxygen vacancy formation for the superior NW device performance. In specific, the In1.8Ga1.8Zn2.4O7 NW field-effect transistor exhibit impressive device characteristics with the average electron mobility of ~ 110 cm2·V−1·s−1 and on/off current ratio of ~ 106. Importantly, these NWs can also be integrated into NW parallel arrays for the construction of high-performance TFT devices, in which their performance is comparable to many state-of-the-art IGZO TFTs. All these results can evidently indicate the promising potential of these crystalline superlattice-structured IGZO NWs for the practical utilization in next-generation metal-oxide TFT device technologies.
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Crystalline InGaZnO quaternary nanowires with superlattice structure for high-performance thin-film transistors. Nano Res. 2019, 12(8): 1796–1803 https://doi.org/10.1007/s12274-019-2434-4

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