Research Article

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2020, 13(7): 1943–1947

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https://doi.org/10.1007/s12274-020-2760-6

Suppressed threshold voltage roll-off and ambipolar transport in multilayer transition metal dichalcogenide feed-back gate transistors

Yang Liu1,§, Peiqi Wang1,2,§, Yiliu Wang1, Yu Huang2, and Xiangfeng Duan1,3 (*)

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1 Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, CA 90095, USA
2 Department of Materials Science and Engineering, University of California, Los Angeles, Los Angeles, CA 90095, USA
3 California Nanosystems Institute, University of California, Los Angeles, Los Angeles, CA 90095, USA
§ Yang Liu and Peiqi Wang contributed equally to this work.

Keywords: two-dimensional transition metal dichalcogenides, feedback gate transistor, threshold voltage roll-off, ambipolar behavior tailoring
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The layered semiconducting transition metal dichalcogenides (s-TMDs) have attracted considerable interest as the channel material for field-effect transistors (FETs). However, the multilayer s-TMD transistors usually exhibit considerable threshold voltage (Vth) shift and ambipolar behavior at high source-drain bias, which is undesirable for modern digital electronics. Here we report the design and fabrication of double feedback gate (FBG) transistors, i.e., source FBG (S-FBG) and drain FBG (D-FBG), to combat these challenges. The FBG transistors differ from normal transistors by including an extra feedback gate, which is directly connected to the source/drain electrodes by extending and overlapping the source/drain electrodes over the yttrium oxide dielectrics on s-TMDs. We show that the S-FBG transistors based on multilayer MoS2 exhibit nearly negligible Vth roll-off at large source-drain bias, and the D-FBG multilayer WSe2 transistors could be tailored into either n-type or p-type transport, depending on the polarity of the drain bias. The double FBG structure offers an effective strategy to tailor multilayer s-TMD transistors with suppressed Vth roll-off and ambipolar transport for high-performance and low-power logic applications.
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Suppressed threshold voltage roll-off and ambipolar transport in multilayer transition metal dichalcogenide feed-back gate transistors. Nano Res. 2020, 13(7): 1943–1947 https://doi.org/10.1007/s12274-020-2760-6

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