Research Article

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2020, 13(6): 1564–1570

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https://doi.org/10.1007/s12274-020-2771-3

Batch synthesis of transfer-free graphene with wafer-scale uniformity

Bei Jiang1,§, Qiyue Zhao2,§, Zhepeng Zhang1, Bingzhi Liu1, Jingyuan Shan1, Liang Zhao3, Mark H. Rümmeli3, Xuan Gao4, Yanfeng Zhang1, Tongjun Yu2, Jingyu Sun3,4 (*), and Zhongfan Liu1,4 (*)

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1 Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
2 State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
3 College of Energy, Soochow Institute for Energy and Materials Innovations (SIEMIS), Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215006, China
4 Beijing Graphene Institute (BGI), Beijing 100095, China
§ Bei Jiang and Qiyue Zhao contributed equally to this work.

Keywords: graphene, batch synthesis, direct chemical vapor deposition (CVD), uniformity, wafer-scale, confined flow
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  • Abstract
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Scalable synthesis of transfer-free graphene over insulators offers exciting opportunity for next-generation electronics and optoelectronics. However, rational design of synthetic protocols to harvest wafer-scale production of directly grown graphene still remains a daunting challenge. Herein we explore a batch synthesis of large-area graphene with wafer-scale uniformity by virtue of direct chemical vapor deposition (CVD) on quartz. Such a controllable CVD approach allows to synthesize 30 pieces of 4-inch graphene wafers in one batch, affording a low fluctuation of optical and electrical properties. Computational fluid dynamics simulations reveal the mechanism of uniform growth, indicating thermal field and confined flow field play leading roles in attaining the batch uniformity. The resulting wafer-scale graphene enables the direct utilization as key components in optical elements. Our method is applicable to other types of insulating substrates (e.g., sapphire, SiO2/Si, Si3N4), which may open a new avenue for direct manufacture of graphene wafers in an economic fashion.
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Batch synthesis of transfer-free graphene with wafer-scale uniformity. Nano Res. 2020, 13(6): 1564–1570 https://doi.org/10.1007/s12274-020-2771-3

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