Research Article


2020, 13(7): 1789–1794


Dynamic observation of in-plane h-BN/graphene heterostructures growth on Ni(111)

Wei Wei1,§, Jiaqi Pan1,§, Chanan Euaruksakul2, Yang Yang3, Yi Cui1 (*), Qiang Fu3, and Xinhe Bao3, 4 (*)

View Author's information

1 Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, the Chinese Academy of Sciences, Suzhou 215123, China
2 Synchrotron Light Research Institute, Nakhon Ratchasima 30000, Thailand
3 State Key Laboratory of Catalysis, iChEM, Dalian Institute of Chemical Physics, the Chinese Academy of Sciences, Dalian 116023, China
4 Department of Chemical Physics, University of Science and Technology of China, Hefei 230026, China
§ Wei Wei and Jiaqi Pan contributed equally to this work.

Keywords: hexagonal boron nitride (h-BN), graphene, in-plane heterostructures, growth dynamics
Full article PDF
Cite this article(Endnote)
Share this article

views: 585

Citations: 0

  • Abstract
  • References
  • Electronic Supplementary Material
The lateral incorporation of graphene and hexagonal boron nitride (h-BN) onto a substrate surface creates in-plane h-BN/graphene heterostructures, which have promising applications in novel two-dimensional electronic and photoelectronic devices. The quality of h-BN/graphene domain boundaries depends on their orientation, which is crucial for device performances. Here, the heteroepitaxial growth of graphene along the edges of h-BN domains on Ni(111) surfaces as well as the growth dynamics of h-BN using chemical vapor deposition (CVD) are in situ investigated by surface imaging measurements. The nucleating seed effect of h-BN has been revealed, which contributes to the single orientation of heterostructures with epitaxial stitching. Further, the growth of h-BN prior to that of graphene is essential to obtain high-quality in-plane h-BN/graphene heterostructures on Ni(111). The “compact to fractal” shape transition of h-BN domains appears with the increasing surface concentration of the growth blocks, suggesting that the dynamic growth mechanism follows diffusion-limited aggregation (DLA) but not reaction-limited aggregation (RLA). Our results provide insights into the synthesis of well-defined h-BN/graphene heterostructures and deep understanding of the growth dynamics of h-BN on metal surfaces.
Related Article
Cite this article

Dynamic observation of in-plane h-BN/graphene heterostructures growth on Ni(111). Nano Res. 2020, 13(7): 1789–1794

Download citation