Research Article

|

2020, 13(4): 952–958

|

https://doi.org/10.1007/s12274-020-2724-x

Enormous enhancement in electrical performance of few-layered MoTe2 due to Schottky barrier reduction induced by ultraviolet ozone treatment

Xiaoming Zheng1,2, Xueao Zhang3, Yuehua Wei2, Jinxin Liu1, Hang Yang2, Xiangzhe Zhang2, Shitan Wang1, Haipeng Xie1, Chuyun Deng2, Yongli Gao1,4, and Han Huang1 (*)

View Author's information

1 Hunan Key Laboratory of Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, China
2 College of Arts and Science, National University of Defense Technology, Changsha 410073, China
3 College of Physical Science and Technology, Xiamen University, Xiamen 361005, China
4 Department of Physics and Astronomy, University of Rochester, Rochester, NY 14627, USA

Keywords: MoTe2, ultraviolet ozone, surface charge transfer, Schottky barrier, air stable hole doping
Full article PDF
Cite this article(Endnote)
Share this article
Metric

views: 226

Citations: 0

  • Abstract
  • References
  • Electronic Supplementary Material
Doping can improve the band alignment at the metal-semiconductor interface to modify the corresponding Schottky barrier, which is crucial for the realization of high-performance logic components. Here, we systematically investigated a convenient and effective method, ultraviolet ozone treatment, for p-type doping of MoTe2 field-effect transistors to enormously enhance the corresponding electrical performance. The resulted hole concentration and mobility are near 100 times enhanced to be ~ 1.0 × 1013 cm−2 and 101.4 cm2/(V·s), respectively, and the conductivity is improved by 5 orders of magnitude. These values are comparable to the highest ones ever obtained via annealing doping or non-lithographic fabrication methods at room temperature. Compared with the pristine one, the photoresponsivity (522 mA/W) is enhanced approximately 100 times. Such excellent performances can be attributed to the sharply reduced Schottky barrier because of the surface charge transfer from MoTe2 to MoOx (x < 3), as proved by photoemission spectroscopy. Additionally, the p-doped devices exhibit excellent stability in ambient air. Our findings show significant potential in future nanoelectronic and optoelectronic applications.
Related Article
Cite this article

Enormous enhancement in electrical performance of few-layered MoTe2 due to Schottky barrier reduction induced by ultraviolet ozone treatment. Nano Res. 2020, 13(4): 952–958 https://doi.org/10.1007/s12274-020-2724-x

Download citation