Research Article

|

2021, 14(6): 1814–1818

|

https://doi.org/10.1007/s12274-020-2922-6

Gate-tunable linear magnetoresistance in molybdenum disulfide field-effect transistors with graphene insertion layer

Hao Huang1,§, Hongming Guan2,§, Meng Su1, Xiaoyue Zhang2, Yuan Liu3, Chuansheng Liu1, Zhihong Zhang2, Kaihui Liu2, Lei Liao1,3 (*), and Ning Tang2 (*)

View Author's information

1 School of Physics and Technology, Wuhan University, Wuhan 430072, China
2 State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
3 Key Laboratory for Micro-/Nano-Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
§ Hao Huang and Hongming Guan contributed equally to this work.

Keywords: molybdenum disulfide (MoS2), contact, linear magnetoresistance, graphene insertion layer, mobility
Full article PDF
Cite this article(Endnote)
Share this article
Metric

views: 140

Citations: 0

  • Abstract
  • References
  • Electronic Supplementary Material
Molybdenum disulfide (MoS2) holds great promise as atomically thin two-dimensional (2D) semiconductor for future electronics and opto-electronics. In this report, we study the magnetoresistance (MR) of MoS2 field-effect transistors (FETs) with graphene insertion layer at the contact interface. Owing to the unique device structure and high-quality contact interface, a gate-tunable linear MR up to 67% is observed at 2 K. By comparing with the MRs of graphene FETs and MoS2 FETs with conventional metal contact, it is found that this unusual MR is most likely to be originated from the contact interfaces between graphene and MoS2, and can be explained by the classical linear MR model caused by spatial fluctuation of carrier mobility. Our study demonstrates large MR responses in MoS2-based systems through heterojunction design, shedding lights for the future magneto-electronics and van der Waals heterostructures.
Related Article
Cite this article

Gate-tunable linear magnetoresistance in molybdenum disulfide field-effect transistors with graphene insertion layer. Nano Res. 2021, 14(6): 1814–1818 https://doi.org/10.1007/s12274-020-2922-6

Download citation