Review Article

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2021, 14(6): 1682–1697

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https://doi.org/10.1007/s12274-020-2919-1

Surface charge transfer doping for two-dimensional semiconductorbased electronic and optoelectronic devices

Yanan Wang1,§, Yue Zheng1,2,§, Cheng Han2 (*), and Wei Chen1,3,4,5 (*)

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1 Department of Physics, National University of Singapore, Singapore 117542, Singapore
2 SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
3 Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
4 Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou 350207, China
5 National University of Singapore (Suzhou) Research Institute, Suzhou 215123, China
§ Yanan Wang and Yue Zheng contributed equally to this work.

Keywords: surface charge transfer doping, two-dimensional (2D) semiconductors, property modulation, electronic devices, optoelectronic devices
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  • Abstract
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Doping of semiconductors, i.e., accurately modulating the charge carrier type and concentration in a controllable manner, is a key technology foundation for modern electronics and optoelectronics. However, the conventional doping technologies widely utilized in silicon industry, such as ion implantation and thermal diffusion, always fail when applied to two-dimensional (2D) materials with atomically-thin nature. Surface charge transfer doping (SCTD) is emerging as an effective and non-destructive doping technique to provide reliable doping capability for 2D materials, in particular 2D semiconductors. Herein, we summarize the recent advances and developments on the SCTD of 2D semiconductors and its application in electronic and optoelectronic devices. The underlying mechanism of STCD processes on 2D semiconductors is briefly introduced. Its impact on tuning the fundamental properties of various 2D systems is highlighted. We particularly emphasize on the SCTD-enabled high-performance 2D functional devices. Finally, the challenges and opportunities for the future development of SCTD are discussed.
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Surface charge transfer doping for two-dimensional semiconductorbased electronic and optoelectronic devices. Nano Res. 2021, 14(6): 1682–1697 https://doi.org/10.1007/s12274-020-2919-1

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