Senfeng Zeng1,§, Zhaowu Tang1,§, Chunsen Liu1,2, and Peng Zhou1 (*)
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1 State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China 2 School of Computer Science, Fudan University, Shanghai 200433, China § Senfeng Zeng and Zhaowu Tang contributed equally to this work.
Keywords:More Moore, More Than Moore, two-dimensional materials, transition metal dichalcogenides (TMDs)
Since Moore’s law in the traditional semiconductor industry is facing shocks, More Moore and More than Moore are proposed as
two paths to maintain the development of the semiconductor industry by adopting new architectures or new materials, in which the
former is committed to the continued scaling of transistors for performance enhancement, and the latter pursues the realization of
functional diversification of electronic systems. Two-dimensional (2D) materials are supposed to play an important role in these
two paths. In More Moore, the ultimate thin thickness and the dangling-bond-free surface of 2D channels offer excellent gate
electrostatics while avoiding the degradation of carrier mobility at the same time, so that the transistors can be further scaled down
for higher performance. In More than Moore, devices based on 2D materials can well meet the requirements of electronic systems
for functional diversity, like that they can operate at high frequency, exhibit excellent sensitivity to the changes in the surroundings
at room temperature, have good mechanical flexibility, and so on. In this review, we present the application of 2D materials in More
Moore and More than Moore domains of electronics, outlining their potential as a technological option for logic electronics, memory
electronics, radio-frequency electronics, sensing electronics, and flexible electronics.