Research Article

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2020, 13(8): 2226–2232

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https://doi.org/10.1007/s12274-020-2841-6

Controllable growth and flexible optoelectronic devices of regularlyassembled Bi2S3 semiconductor nanowire bifurcated junctions and crosslinked networks

Yi Hu1, Lingyun Mao1, Xin Yuan1, Jingyu Lu1, Renpeng Chen1, Tao Chen1, Wenjun Zhang1, Xiaolan Xue1, Wen Yan1, Mohammadreza Shokouhimehr2, Xiao Li Zhang3, and Zhong Jin1,4 (*)

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1 Key Laboratory of Mesoscopic Chemistry of MOE, Jiangsu Key Laborat ory of Advanced Organic Materials, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, China
2 Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
3 School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, China
4 Shenzhen Research Institute of Nanjing University, Shenzhen 518063, China

Keywords: Bi2S3 nanowires, bifurcated junctions, crosslinked networks, flexible optoelectronic devices
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  • Abstract
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Regularly assembled structures of nanowires, such as aligned arrays, junctions and interconnected networks, have great potential for the applications in logical circuits, address decoders, photoelectronic devices and transparent electrodes. However, for now it is still lack of effective approaches for constructing nanowire bifurcated junctions and crosslinked networks with ordered orientations and high quality. Herein, we report the controlled growth of Bi2S3 semiconductor nanowire bifurcated junctions and crosslinked networks with well-aligned directions and high crystalline degree by utilizing the proportional lattice match between nanowires and substrates. Taking advantages of the “tip-to-stem splice” assembly of individual nanowires, the precise orientation alignments of Bi2S3 semiconductor nanowire bifurcated junctions and crosslinked networks were successfully realized. The controlled growth mechanism and structural evolution process have been elucidated by detailed atomic structure characterizations and modeling. The highly crystal quality and direct energy bandgap of as-assembled photodetectors based on individual bismuth sulfide nanowires enabled high photoresponsivity and fast switch time under light illumination. The three-terminal devices based on nanowire bifurcated junctions present rapid carrier transport across the junction. The flexible photodetectors based on nanowire crosslinked networks show very minimal decay of photocurrent after long-term bending test. This work may provide new insights for the guided construction and regular assembly of low-dimensional ordered functional nanostructures towards advanced nanotechnologies.
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Controllable growth and flexible optoelectronic devices of regularlyassembled Bi2S3 semiconductor nanowire bifurcated junctions and crosslinked networks. Nano Res. 2020, 13(8): 2226–2232 https://doi.org/10.1007/s12274-020-2841-6

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