Research Article


2020, 13(12): 3212–3216


Using graphene to suppress the selenization of Pt for controllable fabrication of monolayer PtSe2

Zhong-Liu Liu1,§, Zhi-Li Zhu1,§, Xu Wu2,§, Jin-An Shi1, Wu Zhou1, Li-Wei Liu2, Ye-Liang Wang2,1,3 (✉), and Hong-Jun Gao1,3 (✉)

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1 Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
2 School of Information and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
3 CAS Center for Excellence in Topological Quantum Computation, Beijing 100049, China
§ Zhong-Liu Liu, Zhi-Li Zhu, and Xu Wu contributed equally to this work.

Keywords: PtSe2, graphene, confined reaction, selenization, intercalation
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  • Abstract
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Platinum diselenide (PtSe2) is a promising transition metal dichalcogenide (TMDC) material with unique properties. It is necessary to find a controllable fabrication method to bridge PtSe2 with other two-dimensional (2D) materials for practical applications, which has rarely been reported so far. Here, we report that the selenization of Pt(111) can be suppressed to form a Se intercalated layer, instead of a PtSe2 monolayer, by inducing confined conditions with a precoating of graphene. Experiments with graphene-island samples demonstrate that the monolayer PtSe2 can be controllably fabricated only on the bare Pt surface, while the Se intercalated layer is formed underneath graphene, as verified by atomic-resolution observations with scanning transmission electron microscopy (STEM) and scanning tunneling microscopy (STM). In addition, the orientation of the graphene island shows a negligible influence on the Se intercalated layer induced by the graphene coating. By extending the application of 2D confined reactions, this work provides a new method to control the fabrication and pattern 2D materials during the fabrication process.
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Using graphene to suppress the selenization of Pt for controllable fabrication of monolayer PtSe2. Nano Res. 2020, 13(12): 3212–3216

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