Review Article

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2021, 14(6): 1598–1608

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https://doi.org/10.1007/s12274-020-3019-y

Monolayer MoS2 epitaxy

Zheng Wei1,2, Qinqin Wang1,2, Lu Li1,2, Rong Yang1,2,3, and Guangyu Zhang1,2,3 (✉)

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1 Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
2 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
3 Songshan Lake Materials Laboratory, Dongguan 523808, China

Keywords: monolayer MoS2, epitaxy, domain size, domain alignment, heterostructures
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  • Abstract
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As an emerging two-dimensional (2D) semiconductor material, monolayer MoS2 has recently attracted considerable attention. Various promising applications of this material have been proposed for electronics, optoelectronics, sensing, catalysis, energy storage, and so on. To realize these practical applications, high-quality and large-area MoS2 with controllable properties is required. Among the many different synthesis techniques, epitaxy provides a promising route for producing MoS2 monolayers. Here, we review the epitaxial growth of monolayer MoS2 on various substrates, with a particular focus on large-scale films with large domain sizes and high domain alignments. Finally, we offer perspectives and challenges for future research and applications of this technology.
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Monolayer MoS2 epitaxy. Nano Res. 2021, 14(6): 1598–1608 https://doi.org/10.1007/s12274-020-3019-y

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