Research Article


2021, 14(5): 1311–1318


Robust transport of charge carriers in in-plane 1Tʹ-2H MoTe2 homojunctions with ohmic contact

Donglin Lu§, Zhenqing Li§, Congsheng Xu, Siwei Luo, Chaoyu He, Jun Li, Gang Guo, Guolin Hao, Xiang Qi (✉), and Jianxin Zhong (✉)

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Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, Laboratory for Quantum Engineering and Micro-Nano Energy Technology, and School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, China
§ Donglin Lu and Zhenqing Li contributed equally to this work.

Keywords: 1T′-2H MoTe2 homojunction, ohmic contact, surface potential, built-in potential
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Metal–semiconductor ohmic contacts are required to reduce the energy dissipation for two-dimensional (2D) electronic devices, and phase engineering of 2D transition-metal dichalcogenides (TMDCs) is a promising approach for building ohmic contacts. Here, 2D in-plane 1T′-2H MoTe2 homojunctions were prepared by direct epitaxy via vapor deposition. The interface properties of in-plane 1T′-2H MoTe2 homojunction were investigated in detail by combining experiments, calculations and theories. The ohmic contact properties of 1T′-2H MoTe2 homojunction were proved according to Kelvin force probe microscopy and density functional theory calculations. The charge carriers robust transport in in-plane 1T′-2H MoTe2 homojunction without Fermi-level pinning can be well described by Poisson equation and band alignment. These results indicate that phase engineering of 2D TMDCs is promising to construct ohmic contacts for device applications.
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Robust transport of charge carriers in in-plane 1Tʹ-2H MoTe2 homojunctions with ohmic contact. Nano Res. 2021, 14(5): 1311–1318

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