Review Article

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2021, 14(6): 1668–1681

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https://doi.org/10.1007/s12274-20-3013-4

Substitutional doping in 2D transition metal dichalcogenides

Leyi Loh1,2,§, Zhepeng Zhang1,§, Michel Bosman2 (✉), and Goki Eda1,3,4 (✉)

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1 Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
2 Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117575, Singapore
3 Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore
4 Centre for Advanced 2D Materials, National University of Singapore, 2 Science Drive 2, Singapore 117542, Singapore
§ Leyi Loh and Zhepeng Zhang contributed equally to this work.

Keywords: substitutional doping, transition metal dichalcogenide, two-dimensional semiconductor, acceptor, donor
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  • Abstract
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Two-dimensional (2D) van der Waals transition metal dichalcogenides (TMDs) are a new class of electronic materials offering tremendous opportunities for advanced technologies and fundamental studies. Similar to conventional semiconductors, substitutional doping is key to tailoring their electronic properties and enabling their device applications. Here, we review recent progress in doping methods and understanding of doping effects in group 6 TMDs (MX2, M = Mo, W; X = S, Se, Te), which are the most widely studied model 2D semiconductor system. Experimental and theoretical studies have shown that a number of different elements can substitute either M or X atoms in these materials and act as n- or p-type dopants. This review will survey the impact of substitutional doping on the electrical and optical properties of these materials, discuss open questions, and provide an outlook for further studies.
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Substitutional doping in 2D transition metal dichalcogenides. Nano Res. 2021, 14(6): 1668–1681 https://doi.org/10.1007/s12274-20-3013-4

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