Research Article


2021, 14(6): 1784–1788


Crypto primitive of MOCVD MoS2 transistors for highly secured physical unclonable functions

Bangjie Shao1, Tsz Hin Choy1, Feichi Zhou1, Jiewei Chen1, Cong Wang1, Yong Ju Park2, Jong-Hyun Ahn2 (✉), and Yang Chai1 (✉)

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1 Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China
2 School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea

Keywords: transition metal dichalcogenides, two-dimensional materials, physical unclonable function, metal-organic chemical vapor deposition, field-effect transistor
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  • Abstract
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Physically unclonable crypto primitives have potential applications for anti-counterfeiting, identification, and authentication, which are clone proof and resistant to variously physical attack. Conventional physical unclonable function (PUF) based on Si complementary metal-oxide-semiconductor (CMOS) technologies greatly suffers from entropy loss and bit instability due to noise sensitivity. Here we grow atomically thick MoS2 thin film and fabricate field-effect transistors (FETs). The inherently physical randomness of MoS2 transistors from materials growth and device fabrication process makes it appropriate for the application of PUF device. We perform electrical characterizations of MoS2 FETs, collect the data from 448 devices, and generate PUF keys by splitting drain current at specific levels to evaluate the response performance. Proper selection of splitting threshold enables to generate binary, ternary, and double binary keys. The generated PUF keys exhibit good randomness and uniqueness, providing a possibility for harvesting highly secured PUF devices with two-dimensional materials.
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Crypto primitive of MOCVD MoS2 transistors for highly secured physical unclonable functions. Nano Res. 2021, 14(6): 1784–1788

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