Research Article

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2022, 15(1): 368–376

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https://doi.org/10.1007/s12274-021-3485-x

Large area van der Waals epitaxy of II-VI CdSe thin films for flexible optoelectronics and full-color imaging

Wenwu Pan1,§, Junliang Liu1,§, Zekai Zhang1, Renjie Gu1, Alexandra Suvorova2, Sarah Gain2, Han Wang1, Ziyuan Li3, Lan Fu3, Lorenzo Faraone1, and Wen Lei1 (✉)

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1 Department of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Highway, Crawley 6009, Australia
2 Centre for Microscopy, Characterisation and Analysis, The University of Western Australia, 35 Stirling Highway, Perth 6009, Australia
3 Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra ACT 2601, Australia
§ Wenwu Pan and Junliang Liu contributed equally to this work.

Keywords: CdSe, flexible devices, van der Waals epitaxy, molecular beam epitaxy, layer lift-off
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  • Abstract
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The demand for future semiconductor devices with enhanced performance and lower cost has driven the development of epitaxial growth of high quality, free-standing semiconductor thin film materials without the requirement of lattice matching to the substrate, as well as their transfer to other substrates and associated device processing technology. This work presents a study on the van der Waals epitaxy based molecular beam epitaxy of CdSe thin films on two-dimensional layered mica substrates, as well as related etch-free layer transfer technology of large area, free-standing layers and their application in flexible photodetectors for full-color imaging. The photoconductor detectors based on these flexible CdSe thin films demonstrate excellent device performance at room temperature in terms of responsivity (0.2 A·W–1) and detectivity (1.5 × 1012 Jones), leading to excellent full-color imaging quality in the visible spectral range. An etch-free and damage-free layer transfer method has been developed for transferring these CdSe thin films from mica to other substrate for further device processing and integration. These results demonstrate the feasibility of van der Waals epitaxy method for growing high quality, large area, and free-standing epitaxial layers without the requirement for lattice matching to substrate for applications in low-cost flexible and/or monolithic integrated optoelectronic devices.
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Large area van der Waals epitaxy of II-VI CdSe thin films for flexible optoelectronics and full-color imaging. Nano Res. 2022, 15(1): 368–376 https://doi.org/10.1007/s12274-021-3485-x

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