Review Article

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2022, 15(1): 123–144

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https://doi.org/10.1007/s12274-021-3500-2

p-/n-Type modulation of 2D transition metal dichalcogenides for electronic and optoelectronic devices

Songyu Li1, Yang Ma2, Nabonswende Aida Nadege Ouedraogo2, Famin Liu1 (✉), Congya You2, Wenjie Deng2, and Yongzhe Zhang2 (✉)

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1 School of Physics, Beihang University, Beijing 100191, China
2 Key Laboratory of Advanced Functional Materials, Ministry of Education, College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124, China

Keywords: transition metal dichalcogenides, p-/n-type modulation, doping method, electronic devices, optoelectronic devices
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  • Abstract
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Two-dimensional layered transition metal dichalcogenides (TMDCs) have demonstrated a huge potential in the broad fields of optoelectronic devices, logic electronics, electronic integration, as well as neural networks. To take full advantage of TMDC characteristics and efficiently design the device structures, one of the most key processes is to control their p-/n-type modulation. In this review, we summarize the p-/n-type modulation of TMDCs based on diverse strategies consisting of intrinsic defect tailoring, substitutional doping, surface charge transfer, chemical intercalation, electrostatic modulation, and dielectric interface engineering. The modulation mechanisms and comparisons of these strategies are analyzed together with a discussion of their corresponding device applications in electronics and optoelectronics. Finally, challenges and outlooks for p-/n-type modulation of TMDCs are presented to provide references for future studies.
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p-/n-Type modulation of 2D transition metal dichalcogenides for electronic and optoelectronic devices. Nano Res. 2022, 15(1): 123–144 https://doi.org/10.1007/s12274-021-3500-2

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