Volume 4

Issue 10,2011

(10 articles)

Shun Mao, Kehan Yu, Ganhua Lu, and Junhong Chen ()

A highly sensitive field-effect transistor (FET) biosensor has been fabricated using thermally-reduced graphene oxide (TRGO) sheets functionalized with gold nanoparticle (NP)–antibody conjugates. The detection limit of the novel biosensor has been optimized to the 0.2 ng/mL level by tuning the sensor structure.
2011, 4(10): 921–930

Bin Wu1, Dechao Geng1, Yunlong Guo1, Liping Huang1, Jianyi Chen1, Yunzhou Xue1, Gui Yu1,Yunqi Liu1(), Hisashi Kajiura2 , and Yongming Li2

The densities of single-walled carbon nanotube arrays on ST-cut quartz substrates have been significantly improved by a factor of up to 60 using a “periodic growth” approach with low catalyst densities on the surface. This approach is extraordinarily effective for SWNT density enhancement over a wide range of initial catalyst densities, substrates, catalyst types and growth conditions.
2011, 4(10): 931–937

Haimin Zhang1, Hua Yu1, Yanhe Han1, Porun Liu1, Shanqing Zhang1, Peng Wang2, Yibing Cheng3, and Huijun Zhao1 ()

Uniquely structured rutile TiO2 microspheres with exposed nanoacicular single crystals and high surface area used as a light harvesting enhancement material result in high solar energy conversion efficiency for dye-sensitized solar cells.
2011, 4(10): 938–947

Qing Hua1,2,3, Fucheng Shi1,2,3, Kai Chen2, Sujie Chang1,2,3, Yunsheng Ma3, Zhiquan Jiang1, Guoqiang Pan4, and Weixin Huang1,2,3()

Au colloid-catalyzed decomposition of CuH nanoparticles in aqueous solution has been successfully developed as a novel method for the synthesis of Cu2O–Au nanocomposites that exhibit uniform nanostructures and remarkable chemisorption capacities and visible- light-driven photocatalytic activities.
2011, 4(10): 948–962

Yasumitsu Miyata1, Kazunari Shiozawa1, Yuki Asada1, Yutaka Ohno2, Ryo Kitaura1, Takashi Mizutani2, and Hisanori Shinohara1 ()

Highly pure, micrometer-long semiconducting single-walled carbon nanotubes afford solution-processable thin-film transistors with a high mobility of 164 cm2V–1s–1 and on/off current ratio of 106.
2011, 4(10): 963–970

Olaf Lübben1(), Sergey A. Krasnikov1, Alexei B. Preobrajenski2, Barry E. Murphy1, and Igor V. Shvets1

Fe atoms self-assemble on the Ge(001) surface into well-ordered nanoclusters of uniform size. Two types of Fe nanoclusters, as well as Fe nanorow structures, can be grown on the surface, depending on preparation conditions. The Fe nanostructures exhibit superparamagnetic behaviour.
2011, 4(10): 971–978

Peixu Li1,§, Shanshan Wang2,3,§, Yi Jia1, Zhen Li1, Chunyan Ji3, Luhui Zhang3, Hongbian Li3, Enzheng Shi3, Zuqiang Bian2, Chunhui Huang2, Jinquan Wei1, Kunlin Wang1, Hongwei Zhu1,4, Dehai Wu1, and Anyuan Cao3 ()

A flexible carbon nanotube (CNT) film coated on a rough CuI polycrystalline layer can be used as a transparent electrode in CuI–Si heterojunction solar cells. Solar cells based on the CNT film show power conversion efficiencies up to 10.5%, comparable to those obtained with sputtered indium tin oxide electrodes.
2011, 4(10): 979–986

Andrey Lysov(), Sasa Vinaji, Matthias Offer, Christoph Gutsche, Ingo Regolin, Wolfgang Mertin, Martin Geller, Werner Prost, Gerd Bacher, and Franz-Josef Tegude

The spatially resolved photoelectric response of a single axial GaAs nanowire pn-diode has been investigated using different measurement techniques. Under AM 1.5 G conditions, a photocurrent of 88 pA, an open circuit voltage of 0.56 V and a fill factor of 69% were obtained.
2011, 4(10): 987–995

Nan Liu§, Zhonghuai Pan§, Lei Fu§, Chaohua Zhang, Boya Dai, and Zhongfan Liu ()

Based on a careful statistical analysis of thousands of atomic force microscopy (AFM) topographic data, we have concluded that the wrinkles on transferred few-layer graphene (typically 1–3 layers) are co-determined by the growth substrate morphology, the transfer process and the thermal stress induction effect. Depending on the transfer medium and experimental conditions, most of the wrinkles can be either released or preserved.
2011, 4(10): 996–1004

Ruo-Gu Huang1, Douglas Tham2, Dunwei Wang3, and James R. Heath2()

High performance Si nanowire (SiNW) n- and p- field-effect transistors (FETs) can be fabricated from 10-nm wide SiNWs (left). Ring-oscillator circuits fabricated from these nanowire FETs show excellent performance with a nearly rail-to-rail output waveform (right).
2011, 4(10): 1005–1012