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Highly Sensitive Protein Sensor Based on Thermally-Reduced Graphene Oxide Field-Effect Transistor

Shun Mao, Kehan Yu, Ganhua Lu, and Junhong Chen ()

Department of Mechanical Engineering, University of Wisconsin-Milwaukee, 3200 N. Cramer St., Milwaukee, WI 53211, USA

DOI 10.1007/s12274-011-0148-3


Address correspondence to

A highly sensitive field-effect transistor (FET) biosensor has been fabricated using thermally-reduced graphene oxide (TRGO) sheets functionalized with gold nanoparticle (NP)每antibody conjugates. The detection limit of the novel biosensor has been optimized to the 0.2 ng/mL level by tuning the sensor structure.


Ultrahigh Density Modulation of Aligned Single-Walled Carbon Nanotube Arrays

Bin Wu1, Dechao Geng1, Yunlong Guo1, Liping Huang1, Jianyi Chen1, Yunzhou Xue1, Gui Yu1,Yunqi Liu1 (), Hisashi Kajiura2 , and Yongming Li2
Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
2 Material Laboratory, Sony Corporation, Atsugi Tec. No.2 4-16-1 Okata Atsugi, Kanagawa 243-0021, Japan

DOI 10.1007/s12274-011-0149-2


Address correspondence to Yunqi Liu,

The densities of single-walled carbon nanotube arrays on ST-cut quartz substrates have been significantly improved by a factor of up to 60 using a ※periodic growth§ approach with low catalyst densities on the surface. This approach is extraordinarily effective for SWNT density enhancement over a wide range of initial catalyst densities, substrates, catalyst types and growth conditions.


Rutile TiO2 Microspheres with Exposed Nano-Acicular Single Crystals for Dye-Sensitized Solar Cells

Haimin Zhang1, Hua Yu1, Yanhe Han1, Porun Liu1, Shanqing Zhang1, Peng Wang2, Yibing Cheng3, and Huijun Zhao1 ()

1 Centre for Clean Environment and Energy, and Griffith School of Environment, Griffith University, Gold Coast Campus, Queensland 4222, Australia
2 State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, 130022 Changchun, China
3 Department of Materials Engineering, Monash University, Melbourne, Victoria, 3800, Australia

DOI 10.1007/s12274-011-0150-9


Address correspondence to

Uniquely structured rutile TiO2 microspheres with exposed nanoacicular single crystals and high surface area used as a light harvesting enhancement material result in high solar energy conversion efficiency for dye-sensitized solar cells.


Cu2O每Au Nanocomposites with Novel Structures and Remarkable Chemisorption Capacity and Photocatalytic Activity

Qing Hua1,2,3, Fucheng Shi1,2,3, Kai Chen2, Sujie Chang1,2,3, Yunsheng Ma3, Zhiquan Jiang1, Guoqiang Pan4, and Weixin Huang1,2,3 ()
1 Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
2 CAS Key Laboratory of Materials for Energy Conversion, University of Science and Technology of China, Hefei 230026, China
3 Department of Chemical Physics, University of Science and Technology of China, Hefei 230026, China
4 National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China

DOI 10.1007/s12274-011-0151-8


Address correspondence to

Au colloid-catalyzed decomposition of CuH nanoparticles in aqueous solution has been successfully developed as a novel method for the synthesis of Cu2O每Au nanocomposites that exhibit uniform nanostructures and remarkable chemisorption capacities and visible- light-driven photocatalytic activities.


Length-Sorted Semiconducting Carbon Nanotubes for High-Mobility Thin Film Transistors

Yasumitsu Miyata1, Kazunari Shiozawa1, Yuki Asada1, Yutaka Ohno2, Ryo Kitaura1, Takashi Mizutani2, and Hisanori Shinohara1 ()

1 Department of Chemistry and Institute for Advanced Research, Nagoya University, Nagoya, 464-8602, Japan
2 Department of Quantum Engineering, Nagoya University Nagoya, 464-8603, Japan

DOI 10.1007/s12274-011-0152-7


Address correspondence to

Highly pure, micrometer-long semiconducting single-walled carbon nanotubes afford solution-processable thin-film transistors with a high mobility of 164 cm2V每1s每1 and on/off current ratio of 106.


Fe Nanoclusters on the Ge(001) Surface Studied by Scanning Tunneling Microscopy, Density Functional Theory Calculations and X-Ray Magnetic Circular Dichroism

Olaf L邦bben(), Sergey A. Krasnikov1, Alexei B. Preobrajenski2, Barry E. Murphy1, and Igor V. Shvets1
1 Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), School of Physics, Trinity College Dublin, Dublin 2, Ireland
2 MAX-lab, Lund University, Box 118, 22100 Lund, Sweden

DOI 10.1007/s12274-011-0153-6


Address correspondence to

Fe atoms self-assemble on the Ge(001) surface into well-ordered nanoclusters of uniform size. Two types of Fe nanoclusters, as well as Fe nanorow structures, can be grown on the surface, depending on preparation conditions. The Fe nanostructures exhibit superparamagnetic behaviour.


CuI每Si Heterojunction Solar Cells with Carbon Nanotube Films as Flexible Top-Contact Electrodes

Peixu Li1,∫, Shanshan Wang2,3,∫, Yi Jia1, Zhen Li1, Chunyan Ji3, Luhui Zhang3, Hongbian Li3, Enzheng Shi3, Zuqiang Bian2, Chunhui Huang2, Jinquan Wei1, Kunlin Wang1, Hongwei Zhu1,4, Dehai Wu1, and Anyuan Cao3 ()

1 Department of Mechanical Engineering, Tsinghua University, Beijing 100084, China
2 College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
3 College of Engineering, Peking University, Beijing 100871, China
4 Center for Nano and Micro Mechanics, Tsinghua University, Beijing 100084, China
These authors contributed equally to this work

DOI 10.1007/s12274-011-0154-5


Address correspondence to

A flexible carbon nanotube (CNT) film coated on a rough CuI polycrystalline layer can be used as a transparent electrode in CuI每Si heterojunction solar cells. Solar cells based on the CNT film show power conversion efficiencies up to 10.5%, comparable to those obtained with sputtered indium tin oxide electrodes.


Spatially Resolved Photoelectric Performance of Axial GaAs Nanowire pn-Diodes

Andrey Lysov (), Sasa Vinaji, Matthias Offer, Christoph Gutsche, Ingo Regolin, Wolfgang Mertin, Martin Geller, Werner Prost, Gerd Bacher, and Franz-Josef Tegude
Center for Nanointegration Duisburg-Essen, University of Duisburg-Essen, 47048, Duisburg, Germany

DOI 10.1007/s12274-011-0155-4


Address correspondence to

The spatially resolved photoelectric response of a single axial GaAs nanowire pn-diode has been investigated using different measurement techniques. Under AM 1.5 G conditions, a photocurrent of 88 pA, an open circuit voltage of 0.56 V and a fill factor of 69% were obtained.


The Origin of Wrinkles on Transferred Graphene

Nan Liu, Zhonghuai Pan, Lei Fu, Chaohua Zhang, Boya Dai, and Zhongfan Liu ()

Center for Nanochemistry (CNC), Beijing National Laboratory for Molecular Sciences, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
These authors contributed equally to this work

DOI 10.1007/s12274-011-0156-3


Address correspondence to

Based on a careful statistical analysis of thousands of atomic force microscopy (AFM) topographic data, we have concluded that the wrinkles on transferred few-layer graphene (typically 1每3 layers) are co-determined by the growth substrate morphology, the transfer process and the thermal stress induction effect. Depending on the transfer medium and experimental conditions, most of the wrinkles can be either released or preserved.


High Performance Ring Oscillators from 10-nm Wide Silicon Nanowire Field-Effect Transistors

Ruo-Gu Huang1, Douglas Tham2, Dunwei Wang3, and James R. Heath2 ()
1 Department of Electrical Engineering, California Institute of Technology, MC 136-93, Pasadena, CA 91125, USA
2 Division of Chemistry and Chemical Engineering, California Institute of Technology, MC 127-72, Pasadena, CA 91125, USA
3 Department of Chemistry, Boston College, 140 Commonwealth Ave, Chestnut Hill, Massachusetts 02467, USA

DOI 10.1007/s12274-011-0157-2


Address correspondence to

High performance Si nanowire (SiNW) n- and p- field-effect transistors (FETs) can be fabricated from 10-nm wide SiNWs (left). Ring-oscillator circuits fabricated from these nanowire FETs show excellent performance with a nearly rail-to-rail output waveform (right).


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