Volume 12

Issue 01,2019

(30 articles)


Hao Wu1,2, Pengju Ren3,4, Peng Zhao4, Zhongmiao Gong5, Xiaodong Wen3,4, Yi Cui5 (*), Qiang Fu2 (*), and Xinhe Bao1,2

Monolayer h-BN is transparent for imaging of CO molecules underneath by near ambient pressure STM, showing confinementinduced enrichment of CO adsorption in nanospace between h-BN and Pt(111).
2019, 12(1): 85–90
Published: 4 September 2018

Ivan Sergeevich Merenkov1,2 (*), Mikhail Sergeevich Myshenkov3, Yuri Mikhailovich Zhukov3, Yohei Sato4, Tatyana Sergeevna Frolova5,6,7, Denis Vasilevich Danilov3, Igor Alekseevich Kasatkin3, Oleg Sergeevich Medvedev3, Roman Vladimirovich Pushkarev1, Olga Ivanovna Sinitsyna5,7, Masami Terauchi4, Irina Alekseevna Zvereva3, Marina Leonidovna Kosinova1, and Ken Ostrikov8,9

In this study, we present low-temperature plasma synthesis of vertically oriented hexagonal boron nitride (h-BN) nanosheets with different morphology-maze-like and wavy. The morphological type can be easily and effectively controlled by the deposition temperature. The high thermal stability, oxidation resistivity and significant antibacterial effect of h-BN nanosheets were demonstrated.
2019, 12(1): 91–99
Published: 3 September 2018

Rizwan Ur Rehman Sagar1,2,3, Massimiliano Galluzzi1,4, Alberto García-Peas1,2, Masroor Ahmad Bhat1,2, Min Zhang3, and Florian J. Stadler1 (*)

Room temperature positive magnetoresistance (PMR) in graphene is a conventional phenomenon but we observed large negative magnetoresistance (NMR) in GF/polydimethylsiloxane (GF/PDMS) at room temperature for the first time.
2019, 12(1): 101–107
Published: 11 September 2018

Guopeng Li1, Jingsheng Huang2, Yanqing Li2, Jianxin Tang2 (*), and Yang Jiang1 (*)

A uniform and low-roughness CsPbBr3 quantum-dot film with high photoluminescence quantum yield (PLQY) can be prepared via the solid-solution ligand-exchange method with π-conjugation molecules. A highly bright CsPbBr3 quantum dot light-emitting diode (QLED) with a luminance of 12,650 cd/m2 can be fabricated with PEABr treatment.
2019, 12(1): 109–114
Published: 11 September 2018

Wenxu Sun1,§, Heting Jiang1,§, Xin Wu1,§, Zhengyu Xu1, Chen Yao2,3, Juan Wang1, Meng Qin1, Qing Jiang2,3, Wei Wang1 (*), Dongquan Shi2,3 (*), and Yi Cao1 (*)

A dual crosslinked hydrogel containing dynamic covalent boronate ester bonds between the anti-inflammation drug, tannic acid, and the hydrogel backbone was engineered for ultrasound triggered drug release. The unique nanoscale architecture of the hydrogel network greatly prevents basal drug release under normal stressful physiological conditions.
2019, 12(1): 115–119
Published: 6 September 2018

Jibin Zhang, Lianwei Fan, Junli Li, Xiangfu Liu, Rongwen Wang, Lei Wang, and Guoli Tu (*)

A continuous stirred-tank reactor (CSTR) system was used to retard the reaction rate by controlling the rate of precursors fed into toluene. This scheme helps us observe useful intermediate stages to gain insight into the growth mechanism of CsPbBr3 perovskite nanocrystals.
2019, 12(1): 121–127
Published: 20 September 2018

Ding Ding1,, Yinling Zhang1, Edward A. Sykes2, Long Chen3, Zhuo Chen1 (*), and Weihong Tan1,4 (*)

The physiological environment changed targeting nanomaterials surface chemistry and rendered them biological identities leading to the variations of targeting efficiency. This dynamic changing process involving protein corona blocking, targeting ligands desorption and enzymatic cleavage adversely affected aptamer-guided gold nanoparticles targeting efficiency.
2019, 12(1): 129–135
Published: 17 September 2018

Bangjun Ma1,§, Shizhao Ren1,§, Peiqi Wang1, Chuancheng Jia1, and Xuefeng Guo1,2 (*)

The reaction process of graphene etching by atomic hydrogen, especially the anisotropic etching effect, is elucidated in detail based on a custom-built remote hydrogen plasma etching system. Using the knowledge gained about the relevant mechanisms, controlled preparation of graphene edges with specified zigzag and armchair configuration is achieved, which promises precise control of the electronic properties of graphene.
2019, 12(1): 137–142
Published: 15 September 2018

Zhen Li§, Yihang Liu§, Anyi Zhang, Qingzhou Liu, Chenfei Shen, Fanqi Wu, Chi Xu, Mingrui Chen, Hongyu Fu, and Chongwu Zhou (*)

In this study, we report that n-type β-Ga2O3 FETs made with Ti/Au contacts could exhibit large saturation drain current density of ~3.1 mA/μm and low contact resistance of ~0.387 Ω·mm after annealing in argon atmosphere.
2019, 12(1): 143–148
Published: 22 September 2018

Chunyu Xie1,2,§, Shaolong Jiang1,2,§, Xiaolong Zou3,§, Yuanwei Sun4,5, Liyun Zhao1, Min Hong1,2, Shulin Chen4,6, Yahuan Huan1,2, Jianping Shi1,2, Xiebo Zhou1,2, Zhepeng Zhang1,2, Pengfei Yang1,2, Yuping Shi1,2, Porun Liu7, Qing Zhang1, Peng Gao4,5,8, and Yanfeng Zhang1,2 (*)

Graphene/ReSe2 heterostructures have been synthesized on Au foils via a facile chemical vapor deposition route. Interestingly, the second-grown ReSe2 preferentially evolves at the interface between the first-grown graphene and the Au substrate, thus providing a clear example of the confined growth of a two-dimensional (2D) material. The edges and domain boundaries of graphene are proposed to be the preferred intercalation pathways for the ReSe2 precursors.
2019, 12(1): 149–157
Published: 28 September 2018