Volume 14

Issue 06,2021

(36 articles)

Contents(PDF)

Felix Carrascoso§, Hao Li§, Riccardo Frisenda (*), and Andres Castellanos-Gomez (*)

We systematically study how uniaxial strain modifies the optical properties of single-, bi- and tri-layer transition metal dichalcogenides.
https://doi.org/10.1007/s12274-020-2918-2
2021, 14(6): 1698–1703
Published: 3 July 2020

Zhenjia Zhou1,§, Tao Xu2,§, Chenxi Zhang1, Shisheng Li3, Jie Xu1, Litao Sun2 (✉), and Libo Gao1 (✉)

Stable two-dimensional (2D) transition metal chalcogenides rely on their stoichiometric bonded element ratio. Vacancy defects with X atoms, antisite defects with M atoms, and additive X atoms all reduce the environmental stability.
https://doi.org/10.1007/s12274-020-3035-y
2021, 14(6): 1704–1710
Published: 03 September 2020

Jia-Min Lai1,2, Ya-Ru Xie1,2, and Jun Zhang1,2,3,4 (✉)

Inelastic light scattering provides a powerful experimental tool to explore electron–phonon interaction in solid materials. This review gives an overview of basic theory and experiment advances of Raman and Brillouin scattering in two-dimensional (2D) materials.
https://doi.org/10.1007/s12274-020-2943-1
2021, 14(6): 1711–1733
Published: 27 July 2020

Baishan Liu1,2,§, Junli Du1,2,§, Huihui Yu1,2, Mengyu Hong1,2, Zhuo Kang1,2, Zheng Zhang1,2 (✉), and Yue Zhang1,2 (✉)

Developing the coupling effect characterization techniques to unveil the structure–property–performance relationship of van der Waals (vdW) heterostructures is crucial for fundamental science and practical applications.
https://doi.org/10.1007/s12274-020-3253-3
2021, 14(6): 1734–1751
Published: 08 December 2020

Senfeng Zeng1,§, Zhaowu Tang1,§, Chunsen Liu1,2, and Peng Zhou1 (*)

More Moore and More than Moore are proposed as two paths to maintain the development of the semiconductor industry. Twodimensional materials are proposing to be applied in future electronic devices by the More Moore and More than Moore paths.
https://doi.org/10.1007/s12274-020-2945-z
2021, 14(6): 1752–1767
Published: 13 July 2020

Lingan Kong, Yang Chen, and Yuan Liu (*)

Here, we reviewed the recent progresses of n-type metaloxide-semiconductor (NMOS) and complementary-metal-oxidesemiconductor (CMOS) logic functions based on two-dimensional semiconductors, providing insight for the develoment of more complex logic circuits or microprocessors using two-dimensional channel materials.
https://doi.org/10.1007/s12274-020-2958-7
2021, 14(6): 1768–1783
Published: 25 July 2020

Bangjie Shao1, Tsz Hin Choy1, Feichi Zhou1, Jiewei Chen1, Cong Wang1, Yong Ju Park2, Jong-Hyun Ahn2 (✉), and Yang Chai1 (✉)

The inherently physical randomness of MoS2 transistors from materials growth and device fabrication process makes it appropriate for the application of physical unclonable function (PUF) device. The generated PUF keys exhibit good randomness and uniqueness, providing a possibility for harvesting highly secured PUF devices with two-dimensional materials.
https://doi.org/10.1007/s12274-020-3033-0
2021, 14(6): 1784–1788
Published: 02 September 2020

Huaning Jiang, Peng Zhang, Xingguo Wang, and Yongji Gong (✉)

This paper summarizes the growth methods for two-dimensional (2D) magnetic materials via chemical vapor deposition with their characterizations and applications.
https://doi.org/10.1007/s12274-020-3020-5
2021, 14(6): 1789–1801
Published: 26 August 2020

Zhen Liu1,2,3, Longjiang Deng1,2,3, and Bo Peng1,2,3 (*)

The van der Waals heterostructures comprising two-dimensional (2D) ferromagnetic and ferroelectric materials provide plenty of opportunities to achieve integrated on-chip spintronic and nonvolatile memory devices in future.
https://doi.org/10.1007/s12274-020-2860-3
2021, 14(6): 1802–1813
Published: 29 May 2020

Hao Huang1,§, Hongming Guan2,§, Meng Su1, Xiaoyue Zhang2, Yuan Liu3, Chuansheng Liu1, Zhihong Zhang2, Kaihui Liu2, Lei Liao1,3 (*), and Ning Tang2 (*)

Molybdenum disulfide field-effect transistors with graphene insertion layer are fabricated using a physical transfer method. Gate-tunable linear magnetoresistances (MRs) are obtained at 2 K, and can be explained by the classical linear MR model caused by spatial fluctuation of carrier mobility.
https://doi.org/10.1007/s12274-020-2922-6
2021, 14(6): 1814–1818
Published: 3 July 2020