Volume 8

Issue 03,2015

(30 articles)


Xian Kong1,2, Diannan Lu2 (*), Zheng Liu2 (*), and Jianzhong Wu1 (*)

Strong electrostatic correlations in a room temperature ionic liquid are responsible for the oscillatory variation of the surface charge density during the constant-potential charging of electric double layer capacitors with different separations between two parallel electrodes.
2015, 8(3): 931–940

Na-Young Park1,2, Ho-Seok Nam1, Pil-Ryung Cha1 (*), and Seung-Cheol Lee3 (*)

A new criterion for assessing the preferred deformation mode—slip or twin propagation—of nanowires as a function of diameter is presented. The simulation results demonstrate the size-dependent transition from superplastic deformation to rupture as the nanowire diameter decreases.
2015, 8(3): 941–947

Andrea Iagallo1, Nicola Paradiso1, Stefano Roddaro1,2, Christian Reichl3, Werner Wegscheider3, Giorgio Biasiol2, Lucia Sorba1, Fabio Beltram1, and Stefan Heun1 (*)

We show that the anomalous transport feature known as the 0.7 anomaly is an intrinsic property of low-dimensional systems.
2015, 8(3): 948–956

Chuhong Zhu1, Guowen Meng1,2 (*), Qing Huang3, Xiujuan Wang1, Yiwu Qian1, Xiaoye Hu1, Haibin Tang1, and Nianqiang Wu4

A ZnO-nanotaper array sacrificial templated synthetic approach is presented to fabricate arrays of nanotubes with tube-walls assembled by building-blocks of Ag-nanoplates, Au-nanorods, Pt-nanothorns or Pd-nanopyramids, which possess high surface area and high- density three-dimensional surface-enhanced Raman scattering (SERS) “hot spots”, and can be used for sensitive SERS detection.
2015, 8(3): 957–966

Xiaofeng Qian1, Liang Fu2 (*), and Ju Li1 (*)

Using first-principles calculations we investigate the origin of strain- and thickness-tunable electronic structure in topological crystalline insulator SnTe nanomembranes and propose a frequency-resolved infrared photodetector via inhomogeneous elastic strain engineering.
2015, 8(3): 967–979

Salman Nadar1, Chloé Rolland1, Jean-Franois Lampin1, Xavier Wallart1, Philippe Caroff1,2 (*), and Renaud Leturcq1,3 (*)

Schematic of the nanowire tunnel diode based on the sulfur passivation (surface n-type doping) of a Be-doped InAs nanowire (bulk p-type doping), which gives rise to strong non-linear current–voltage characteristics.
2015, 8(3): 980–989

Sangbaek Park1,§, Hyun-Woo Shim2,§, Chan Woo Lee1, Hee Jo Song1, Ik Jae Park1, Jae-Chan Kim2, Kug Sun Hong1, and Dong-Wan Kim2 (*)

Ultrathin 2-D MnO2 nanosheets with highly conductive 3-D current collectors have been fabricated and assembled into supercapacitors which give excellent electrochemical performance.
2015, 8(3): 990–1004

Panpan Zhang, Yingjun Yang, Tian Pei, Chenguang Qiu, Li Ding, Shibo Liang, Zhiyong Zhang (*), and Lianmao Peng (*)

Through detailed analysis combining simulation and experimental measurements, several kinds of parasitic capacitances dragging the actual speed of carbon nanotube field-effect-transistor integrated circuits (CNT FET ICs) are identified one by one. Various optimized schemes are suggested and demonstrated to minimize the effect of parasitic capacitances, and thus improve the speed of CNT ICs.
2015, 8(3): 1005–1016

Jianyu Chen1, Weixin Zhou1, Jun Chen1, Yong Fan1, Ziqiang Zhang1, Zhendong Huang1, Xiaomiao Feng1 (*), Baoxiu Mi1, Yanwen Ma1 (*), Wei Huang1,2 (*)

Copper nanowires have been embedded into pre-coated poly-(3,4- ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) on polymer films by solution processing to form flexible transparent conductive electrodes, which can be used as anodes for bulk heterojunction solar cells, giving a power conversion efficiency of 1.4%.
2015, 8(3): 1017–1025

Debora Pierucci1, Haikel Sediri1, Mahdi Hajlaoui1,2, Emilio Velez-Fort1,3, Yannick J. Dappe4, Mathieu G. Silly2, Rachid Belkhou2, Abhay Shukla3, Fausto Sirotti2, Noelle Gogneau1, and Abdelkarim Ouerghi1 (*)

A general route has been developed for the direct synthesis of self- organized metal–semiconductor epitaxial graphene layers. Using a off-axis 4H-SiC(0001) substrate, the formation of a periodic arrangement of monolayer graphene on planar (0001) terraces and Bernal bilayer graphene on (112 __ 0) nanofacets of SiC is possible in a one-step process.
2015, 8(3): 1026–1037